A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
CERAMIC SINTERED COMPACT AND MANUFACTURING METHOD THEREOF
To provide a Y2O3-Al2O3-based ceramic sintered compact having plasma resistance equivalent to YAG and fracture toughness applicable to a large-sized structure as a member for a large-sized semiconductor device, and a method for manufacturing thereof.SOLUTION: A ceramic sintered compact for a semiconductor manufacturing device contains crystals of both Y3Al5O12(YAG) and YAlO3(YAP), wherein Y is greater than 37.5 mol% and 39.0 mL or less in terms of oxide (Y2O3), Al is 61.0 mol% or more and less than 62.5 mol% in terms of oxide (Al2O3).SELECTED DRAWING: Figure 3
【課題】ＹＡＧと同程度の耐プラズマ性を有しかつ大型の半導体装置用の部材としての大型構造物にも適用できる破壊靱性を有するＹ２Ｏ３−Ａｌ２Ｏ３系のセラミックス焼結体およびその製造方法を提供する。【解決手段】半導体製造装置用セラミックス焼結体であって、Ｙ３Ａｌ５Ｏ１２（ＹＡＧ）とＹＡｌＯ３（ＹＡＰ）の両方の結晶を含み、酸化物（Ｙ２Ｏ３）換算でＹが３７．５ｍоｌ％より大きく３９．０ｍоｌ％以下、酸化物（Ａｌ２Ｏ３）換算でＡｌが６１．０ｍоｌ％以上６２．５ｍоｌ％未満である。【選択図】図３
CERAMIC SINTERED COMPACT AND MANUFACTURING METHOD THEREOF
To provide a Y2O3-Al2O3-based ceramic sintered compact having plasma resistance equivalent to YAG and fracture toughness applicable to a large-sized structure as a member for a large-sized semiconductor device, and a method for manufacturing thereof.SOLUTION: A ceramic sintered compact for a semiconductor manufacturing device contains crystals of both Y3Al5O12(YAG) and YAlO3(YAP), wherein Y is greater than 37.5 mol% and 39.0 mL or less in terms of oxide (Y2O3), Al is 61.0 mol% or more and less than 62.5 mol% in terms of oxide (Al2O3).SELECTED DRAWING: Figure 3
【課題】ＹＡＧと同程度の耐プラズマ性を有しかつ大型の半導体装置用の部材としての大型構造物にも適用できる破壊靱性を有するＹ２Ｏ３−Ａｌ２Ｏ３系のセラミックス焼結体およびその製造方法を提供する。【解決手段】半導体製造装置用セラミックス焼結体であって、Ｙ３Ａｌ５Ｏ１２（ＹＡＧ）とＹＡｌＯ３（ＹＡＰ）の両方の結晶を含み、酸化物（Ｙ２Ｏ３）換算でＹが３７．５ｍоｌ％より大きく３９．０ｍоｌ％以下、酸化物（Ａｌ２Ｏ３）換算でＡｌが６１．０ｍоｌ％以上６２．５ｍоｌ％未満である。【選択図】図３
CERAMIC SINTERED COMPACT AND MANUFACTURING METHOD THEREOF
セラミックス焼結体およびその製造方法
TAKAHASHI YUKI (author) / SATO KEISUKE (author) / SEKIYA SHUSUKE (author)
2021-09-16
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
SINTERED COMPACT MANUFACTURING METHOD AND SINTERED COMPACT MANUFACTURING DEVICE
| European Patent Office | 2021
| European Patent Office | 2020
SINTERED COMPACT AND METHOD FOR MANUFACTURING SINTERED COMPACT
| European Patent Office | 2018