A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SILICON CARBIDE FIBER AND MANUFACTURING METHOD THEREOF
To provide a silicon carbide fiber having excellent creep resistance and a manufacturing method thereof.SOLUTION: A silicon carbide fiber 1 satisfies, when observing its cross section, a relation of (d1ave/d2ave)<0.90 between d1ave, which is an average value of particle diameters of silicon carbide crystal 11 in a region 0.5 μm from its surface toward its center (surface layer region) and d2ave, which is an average value of particle diameters of silicon carbide crystal 13 in a circular area of 0.4 μm in radius from the center. Preferably, a surface of the silicon carbide fiber 1 includes nitrogen atom-containing silicon carbide wherein some of carbon atoms in silicon carbide are replaced by nitrogen atoms.SELECTED DRAWING: Figure 1
【課題】耐クリープ性に優れた炭化珪素繊維及びその製造方法を提供する。【解決手段】本発明の炭化珪素繊維１は、その断面を見た場合に、表面から中心に向かって０．５μｍまでの領域（表層領域）における炭化珪素結晶１１の粒径の平均値ｄ１ａｖｅ、及び、中心から半径０．４μｍの円領域における炭化珪素結晶１３の粒径の平均値ｄ２ａｖｅの間で（ｄ１ａｖｅ／ｄ２ａｖｅ）＜０．９０の関係を有することを特徴とする。炭化珪素繊維１の表面は、炭化珪素における一部の炭素原子が窒素原子に置換された窒素原子含有炭化珪素を含むことが好ましい。【選択図】図１
SILICON CARBIDE FIBER AND MANUFACTURING METHOD THEREOF
To provide a silicon carbide fiber having excellent creep resistance and a manufacturing method thereof.SOLUTION: A silicon carbide fiber 1 satisfies, when observing its cross section, a relation of (d1ave/d2ave)<0.90 between d1ave, which is an average value of particle diameters of silicon carbide crystal 11 in a region 0.5 μm from its surface toward its center (surface layer region) and d2ave, which is an average value of particle diameters of silicon carbide crystal 13 in a circular area of 0.4 μm in radius from the center. Preferably, a surface of the silicon carbide fiber 1 includes nitrogen atom-containing silicon carbide wherein some of carbon atoms in silicon carbide are replaced by nitrogen atoms.SELECTED DRAWING: Figure 1
【課題】耐クリープ性に優れた炭化珪素繊維及びその製造方法を提供する。【解決手段】本発明の炭化珪素繊維１は、その断面を見た場合に、表面から中心に向かって０．５μｍまでの領域（表層領域）における炭化珪素結晶１１の粒径の平均値ｄ１ａｖｅ、及び、中心から半径０．４μｍの円領域における炭化珪素結晶１３の粒径の平均値ｄ２ａｖｅの間で（ｄ１ａｖｅ／ｄ２ａｖｅ）＜０．９０の関係を有することを特徴とする。炭化珪素繊維１の表面は、炭化珪素における一部の炭素原子が窒素原子に置換された窒素原子含有炭化珪素を含むことが好ましい。【選択図】図１
SILICON CARBIDE FIBER AND MANUFACTURING METHOD THEREOF
炭化珪素繊維及びその製造方法
YAMAGUCHI TETSUHISA (author) / MATSUDA TETSUSHI (author) / KIMURA TEIICHI (author) / SUEHIRO SATOSHI (author) / NAGANO YASUO (author) / YOKOE DAISAKU (author) / KATO TAKEHARU (author) / ITO TAISHI (author) / KITAOKA SATOSHI (author)
2021-11-18
Patent
Electronic Resource
Japanese
MANUFACTURING METHOD OF CONTINUOUS SILICON CARBIDE FIBER
| European Patent Office | 2023
| European Patent Office | 2022
SILICON CARBIDE REFRACTORY, AND MANUFACTURING METHOD THEREOF
| European Patent Office | 2021
SILICON CARBIDE FIBER-REINFORCED SILICON CARBIDE COMPOSITE
| European Patent Office | 2020