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A platform for research: civil engineering, architecture and urbanism
CRYSTALLINE SILICON CARBIDE FIBER, METHOD FOR PRODUCING THE SAME AND CERAMIC COMPOSITE BASE MATERIAL
To provide a crystalline silicon carbide fiber having a sufficiently high thermal conductivity, and a method for producing the same.SOLUTION: A crystalline silicon carbide fiber comprises silicon carbide, boron nitride and zirconium carbide, in which the content of Si is 64 wt.% or more, the content of C is 28 wt.% or more and the average grain size of SiC crystal grains is 100 nm or more. A method for producing a crystalline silicon carbide fiber has: a pretreatment step in which a Zr-comprising amorphous silicon carbide fiber is heated at 1,550 to 1,850°C in an inert gas atmosphere different from nitrogen to obtain a first heat-treated object; a firing step in which the first heat-treated object is heated at 1,900 to 2,200°C in an inert gas atmosphere to obtain a second heat-treated object comprising SiC crystal grains and a boundary phase comprising amorphous SiC; and an annealing step in which the second heat-treated object is heated at 1,800 to 2,100°C in a nitrogen-comprising inert gas atmosphere.SELECTED DRAWING: None
【課題】十分に高い熱伝導率を有する結晶性炭化ケイ素繊維及びその製造方法を提供する。【解決手段】炭化ケイ素と窒化ホウ素と炭化ジルコニウムとを含有し、Ｓｉの含有量が６４重量％以上、及びＣの含有量が２８重量％以上であり、ＳｉＣ結晶粒の平均粒子径が１００ｎｍ以上である結晶性炭化ケイ素繊維を提供する。Ｚｒを含有する非晶質炭化ケイ素繊維を、窒素とは異なる不活性ガス雰囲気中で1550～1850℃に加熱して第１加熱処理物を得る前処理工程と、第１加熱処理物を、不活性ガス雰囲気中、1900～2200℃に加熱してＳｉＣ結晶粒と非晶質ＳｉＣを含む粒界相とを含有する第２加熱処理物を得る焼成工程と、第２加熱処理物を、窒素を含む不活性ガス雰囲気中、1800～2100℃に加熱するアニール工程と、を有する、結晶性炭化ケイ素繊維の製造方法を提供する。【選択図】なし
CRYSTALLINE SILICON CARBIDE FIBER, METHOD FOR PRODUCING THE SAME AND CERAMIC COMPOSITE BASE MATERIAL
To provide a crystalline silicon carbide fiber having a sufficiently high thermal conductivity, and a method for producing the same.SOLUTION: A crystalline silicon carbide fiber comprises silicon carbide, boron nitride and zirconium carbide, in which the content of Si is 64 wt.% or more, the content of C is 28 wt.% or more and the average grain size of SiC crystal grains is 100 nm or more. A method for producing a crystalline silicon carbide fiber has: a pretreatment step in which a Zr-comprising amorphous silicon carbide fiber is heated at 1,550 to 1,850°C in an inert gas atmosphere different from nitrogen to obtain a first heat-treated object; a firing step in which the first heat-treated object is heated at 1,900 to 2,200°C in an inert gas atmosphere to obtain a second heat-treated object comprising SiC crystal grains and a boundary phase comprising amorphous SiC; and an annealing step in which the second heat-treated object is heated at 1,800 to 2,100°C in a nitrogen-comprising inert gas atmosphere.SELECTED DRAWING: None
【課題】十分に高い熱伝導率を有する結晶性炭化ケイ素繊維及びその製造方法を提供する。【解決手段】炭化ケイ素と窒化ホウ素と炭化ジルコニウムとを含有し、Ｓｉの含有量が６４重量％以上、及びＣの含有量が２８重量％以上であり、ＳｉＣ結晶粒の平均粒子径が１００ｎｍ以上である結晶性炭化ケイ素繊維を提供する。Ｚｒを含有する非晶質炭化ケイ素繊維を、窒素とは異なる不活性ガス雰囲気中で1550～1850℃に加熱して第１加熱処理物を得る前処理工程と、第１加熱処理物を、不活性ガス雰囲気中、1900～2200℃に加熱してＳｉＣ結晶粒と非晶質ＳｉＣを含む粒界相とを含有する第２加熱処理物を得る焼成工程と、第２加熱処理物を、窒素を含む不活性ガス雰囲気中、1800～2100℃に加熱するアニール工程と、を有する、結晶性炭化ケイ素繊維の製造方法を提供する。【選択図】なし
CRYSTALLINE SILICON CARBIDE FIBER, METHOD FOR PRODUCING THE SAME AND CERAMIC COMPOSITE BASE MATERIAL
結晶性炭化ケイ素繊維、及びその製造方法、並びにセラミックス複合基材
SUMINO MAO (author) / TOYAMA KOICHIRO (author) / OZAWA HIDEO (author) / INO AKI (author) / KODAMA TSUTOMU (author) / YAMAOKA HIROYUKI (author)
2023-06-23
Patent
Electronic Resource
Japanese
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