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A platform for research: civil engineering, architecture and urbanism
METHOD FOR MANUFACTURING SILICON CARBIDE SINTERED BODY
To provide a method for manufacturing a silicon carbide sintered body which can manufacture a uniform sintered body.SOLUTION: A method for manufacturing a silicon carbide sintered body applies a pulse current to a silicon carbide raw material 1 filling the inside of a sinter mold in a state in which the silicon carbide raw material is pressurized by a first punch 20 and a second punch 30 facing each other, and obtains a silicon carbide sintered body, wherein an insulative substance 5 having electric resistivity of 5×1011 Ω m or more is arranged in at least one between the first punch and the silicon carbide raw material when the pulse current is applied, an area of an insulative substance arrangement region is 1 to 42% of an area of a silicon carbide raw material occupation region when being viewed from a pressurization direction, and the insulative substance arrangement region is arranged in a region occupying the area of at least 10% of an internal region having an area of 10% of the area of the silicon carbide raw material occupation region with a center of gravity of the silicon carbide raw material occupation region as a center and having a similar shape thereto.SELECTED DRAWING: Figure 1
【課題】均一な焼結体を製造することができる炭化ケイ素焼結体の製造方法を提供する。【解決手段】焼結型の内部に充填した炭化ケイ素原料１を、互いに対向する第１パンチ２０及び第２パンチ３０によって加圧した状態で、炭化ケイ素原料にパルス電流を印加して炭化ケイ素焼結体を得る、炭化ケイ素焼結体の製造方法であって、パルス電流を印加する際に、第１パンチと炭化ケイ素原料との間の少なくとも一方に、電気抵抗率が５×１０１１Ω・ｍ以上の絶縁性物質５が配置されており、加圧方向から見た際に、絶縁性物質配置領域の面積は、炭化ケイ素原料占有領域の面積の１～４２％であり、絶縁性物質配置領域は、炭化ケイ素原料占有領域の重心を中心として、その面積の１０％の面積を有する相似する形状となる内部領域と定めた際、そのうち少なくとも１０％の面積を占める領域に配置されていることを特徴とする炭化ケイ素焼結体の製造方法。【選択図】図１
METHOD FOR MANUFACTURING SILICON CARBIDE SINTERED BODY
To provide a method for manufacturing a silicon carbide sintered body which can manufacture a uniform sintered body.SOLUTION: A method for manufacturing a silicon carbide sintered body applies a pulse current to a silicon carbide raw material 1 filling the inside of a sinter mold in a state in which the silicon carbide raw material is pressurized by a first punch 20 and a second punch 30 facing each other, and obtains a silicon carbide sintered body, wherein an insulative substance 5 having electric resistivity of 5×1011 Ω m or more is arranged in at least one between the first punch and the silicon carbide raw material when the pulse current is applied, an area of an insulative substance arrangement region is 1 to 42% of an area of a silicon carbide raw material occupation region when being viewed from a pressurization direction, and the insulative substance arrangement region is arranged in a region occupying the area of at least 10% of an internal region having an area of 10% of the area of the silicon carbide raw material occupation region with a center of gravity of the silicon carbide raw material occupation region as a center and having a similar shape thereto.SELECTED DRAWING: Figure 1
【課題】均一な焼結体を製造することができる炭化ケイ素焼結体の製造方法を提供する。【解決手段】焼結型の内部に充填した炭化ケイ素原料１を、互いに対向する第１パンチ２０及び第２パンチ３０によって加圧した状態で、炭化ケイ素原料にパルス電流を印加して炭化ケイ素焼結体を得る、炭化ケイ素焼結体の製造方法であって、パルス電流を印加する際に、第１パンチと炭化ケイ素原料との間の少なくとも一方に、電気抵抗率が５×１０１１Ω・ｍ以上の絶縁性物質５が配置されており、加圧方向から見た際に、絶縁性物質配置領域の面積は、炭化ケイ素原料占有領域の面積の１～４２％であり、絶縁性物質配置領域は、炭化ケイ素原料占有領域の重心を中心として、その面積の１０％の面積を有する相似する形状となる内部領域と定めた際、そのうち少なくとも１０％の面積を占める領域に配置されていることを特徴とする炭化ケイ素焼結体の製造方法。【選択図】図１
METHOD FOR MANUFACTURING SILICON CARBIDE SINTERED BODY
炭化ケイ素焼結体の製造方法
IMAI MASAHITO (author) / HIGASHIMATSU NAOYA (author) / USHIDA TAKESHI (author) / KASUGA MASANOBU (author)
2024-06-06
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2016