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A platform for research: civil engineering, architecture and urbanism
CERAMIC SINTERED BODY FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD THEREOF
To provide a ceramic sintered body for a semiconductor manufacturing apparatus and a manufacturing method thereof, which can obtain a high-density oxyfluoride ceramic sintered body without applying special manufacturing conditions.SOLUTION: The ceramic sintered body for a semiconductor manufacturing apparatus of the present invention is mainly composed of oxyfluoride having polycrystalline structure containing 50% or more of crystals with a grain size of 1 to 5 μm, or has a mixed phase of the oxyfluoride and the fluoride. The sintered body has an L* value of 20 to 65, an a* value of -1 to 10, and a b* value of -1 to 10 in an L*a*b* color system.SELECTED DRAWING: None
【課題】特異な製造条件を適用しなくても、高密度のオキシフッ化セラミックス焼結体を得ることができる半導体製造装置用セラミックス焼結体およびその製造方法を提供する。【解決手段】本発明の半導体製造装置用セラミックス焼結体は、粒径１～５μｍの結晶を５０％以上含む多結晶構造からなるオキシフッ化物を主成分とするか、または、前記オキシフッ化物およびフッ化物の混相を有する焼結体であり、前記焼結体のＬ*ａ*ｂ*表色系でのＬ*値が２０～６５、ａ*値が－１～１０、ｂ*値が－１～１０であることを特徴とする。【選択図】なし
CERAMIC SINTERED BODY FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD THEREOF
To provide a ceramic sintered body for a semiconductor manufacturing apparatus and a manufacturing method thereof, which can obtain a high-density oxyfluoride ceramic sintered body without applying special manufacturing conditions.SOLUTION: The ceramic sintered body for a semiconductor manufacturing apparatus of the present invention is mainly composed of oxyfluoride having polycrystalline structure containing 50% or more of crystals with a grain size of 1 to 5 μm, or has a mixed phase of the oxyfluoride and the fluoride. The sintered body has an L* value of 20 to 65, an a* value of -1 to 10, and a b* value of -1 to 10 in an L*a*b* color system.SELECTED DRAWING: None
【課題】特異な製造条件を適用しなくても、高密度のオキシフッ化セラミックス焼結体を得ることができる半導体製造装置用セラミックス焼結体およびその製造方法を提供する。【解決手段】本発明の半導体製造装置用セラミックス焼結体は、粒径１～５μｍの結晶を５０％以上含む多結晶構造からなるオキシフッ化物を主成分とするか、または、前記オキシフッ化物およびフッ化物の混相を有する焼結体であり、前記焼結体のＬ*ａ*ｂ*表色系でのＬ*値が２０～６５、ａ*値が－１～１０、ｂ*値が－１～１０であることを特徴とする。【選択図】なし
CERAMIC SINTERED BODY FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD THEREOF
半導体製造装置用セラミックス焼結体およびその製造方法
SUGIYAMA MANAMI (author)
2024-07-09
Patent
Electronic Resource
Japanese
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