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A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED COMPACT, SPUTTERING TARGET AND OXIDE THIN FILM
The present invention relates to an oxide sintered body made of zinc (Zn), indium (In), titanium (Ti), tin (Sn), gallium (Ga), germanium (Ge), and oxygen (O). The content of in the oxide sintered body is 40-80 mol% when Zn is converted to Zn_O. The content of In in the oxide sintered body is 3-25 mol% when In is converted to In_2O_3. The content of Ti in the oxide sintered body is 2-15 mol% when Ti is converted to TiO_2. The content of Sn in the oxide sintered body is 5-35 mol% when Sn is converted to SnO_2. The content of Ga in the oxide sintered body is 0.5-10 mol% when Ga is converted to Ga_2O_3. Ge content of the oxide sintered body is 0.5-10 mol% when converted to GeO_2. The present invention can perform DC sputtering by means of a low bulk resistance rate and form a transparent conductive film with excellent chemical properties as well as desired refraction and transmittance rates.
아연 (Zn), 인듐 (In), 티탄 (Ti), 주석 (Sn), 갈륨 (Ga), 게르마늄 (Ge) 및 산소 (O) 로 이루어지고, Zn 함유량이 ZnO 환산으로 40 ∼ 80 ㏖％, In 함유량이 InO환산으로 3 ∼ 25 ㏖％, Ti 함유량이 Ti0환산으로 2 ∼ 15 ㏖％, Sn 함유량이 Sn0환산으로 5 ∼ 35 ㏖％, Ga 함유량이 GaO환산으로 0.5 ∼ 10 ㏖％, Ge 함유량이 GeO환산으로 0.5 ∼ 10 ㏖％ 인 것을 특징으로 하는 산화물 소결체. 본 발명에 의하면, 벌크 저항률이 낮아 DC 스퍼터링이 가능하고, 원하는 굴절률이나 투과율, 나아가서는 우수한 화학적 특성을 구비한 투명 도전막을 형성할 수 있다.
OXIDE SINTERED COMPACT, SPUTTERING TARGET AND OXIDE THIN FILM
The present invention relates to an oxide sintered body made of zinc (Zn), indium (In), titanium (Ti), tin (Sn), gallium (Ga), germanium (Ge), and oxygen (O). The content of in the oxide sintered body is 40-80 mol% when Zn is converted to Zn_O. The content of In in the oxide sintered body is 3-25 mol% when In is converted to In_2O_3. The content of Ti in the oxide sintered body is 2-15 mol% when Ti is converted to TiO_2. The content of Sn in the oxide sintered body is 5-35 mol% when Sn is converted to SnO_2. The content of Ga in the oxide sintered body is 0.5-10 mol% when Ga is converted to Ga_2O_3. Ge content of the oxide sintered body is 0.5-10 mol% when converted to GeO_2. The present invention can perform DC sputtering by means of a low bulk resistance rate and form a transparent conductive film with excellent chemical properties as well as desired refraction and transmittance rates.
아연 (Zn), 인듐 (In), 티탄 (Ti), 주석 (Sn), 갈륨 (Ga), 게르마늄 (Ge) 및 산소 (O) 로 이루어지고, Zn 함유량이 ZnO 환산으로 40 ∼ 80 ㏖％, In 함유량이 InO환산으로 3 ∼ 25 ㏖％, Ti 함유량이 Ti0환산으로 2 ∼ 15 ㏖％, Sn 함유량이 Sn0환산으로 5 ∼ 35 ㏖％, Ga 함유량이 GaO환산으로 0.5 ∼ 10 ㏖％, Ge 함유량이 GeO환산으로 0.5 ∼ 10 ㏖％ 인 것을 특징으로 하는 산화물 소결체. 본 발명에 의하면, 벌크 저항률이 낮아 DC 스퍼터링이 가능하고, 원하는 굴절률이나 투과율, 나아가서는 우수한 화학적 특성을 구비한 투명 도전막을 형성할 수 있다.
OXIDE SINTERED COMPACT, SPUTTERING TARGET AND OXIDE THIN FILM
산화물 소결체, 스퍼터링 타깃 및 산화물 박막
NARA ATSUSHI (author) / SEKI HIDETO (author)
2016-03-09
Patent
Electronic Resource
Korean
IPC:
C04B
Kalk
,
LIME
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