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    / METHOD FOR PREPARING A POWDER COMPRISING CARBON SILICON AND BORON THE SILICON BEING IN SILICON CARBIDE FORM AND THE BORON BEING IN BORON CARBIDE FORM AND/OR BORON ALONE

    본 발명은 탄소, 규소 및 붕소를 포함하는 분말을 제조하는 방법에 관련되고, 상기 규소는 탄화규소 형태이고 상기 붕소는 탄화붕소 형태 및/또는 자유 붕소 형태이고, 상기 방법은 다음 단계를 포함한다:- 탄소계 전구체, 규소계 전구체 및 붕소계 전구체(BX, 여기서 X는 할로겐 원자)를 접촉시켜 이들 세 가지 전구체의 혼합물을 얻는 단계;- 결과 혼합물을 레이저 열분해 받게 하는 단계,상기 붕소계 전구체(BX)는 상기 접촉 단계 전에 및/또는 상기 접촉 단계와 동시에 상기 전구체의 응결온도보다 높은 온도로 가열됨.

    A method is followed to prepare a powder that includes carbon, silicon and boron, the silicon being in silicon carbide form and the boron being in boron carbide and/or free boron form. The method includes contacting a carbon-based precursor, a silicon-based precursor and a boron-based precursor BX3, X being a halogen atom, to obtain a mixture of these three precursors. The resulting mixture is subjected to laser pyrolysis. The boron-based precursor BX3 is heated, prior to the contacting step and/or simultaneously with the contacting step, to a temperature higher than the condensation temperature of the precursor.

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    / METHOD FOR PREPARING A POWDER COMPRISING CARBON SILICON AND BORON THE SILICON BEING IN SILICON CARBIDE FORM AND THE BORON BEING IN BORON CARBIDE FORM AND/OR BORON ALONE

    본 발명은 탄소, 규소 및 붕소를 포함하는 분말을 제조하는 방법에 관련되고, 상기 규소는 탄화규소 형태이고 상기 붕소는 탄화붕소 형태 및/또는 자유 붕소 형태이고, 상기 방법은 다음 단계를 포함한다:- 탄소계 전구체, 규소계 전구체 및 붕소계 전구체(BX, 여기서 X는 할로겐 원자)를 접촉시켜 이들 세 가지 전구체의 혼합물을 얻는 단계;- 결과 혼합물을 레이저 열분해 받게 하는 단계,상기 붕소계 전구체(BX)는 상기 접촉 단계 전에 및/또는 상기 접촉 단계와 동시에 상기 전구체의 응결온도보다 높은 온도로 가열됨.

    A method is followed to prepare a powder that includes carbon, silicon and boron, the silicon being in silicon carbide form and the boron being in boron carbide and/or free boron form. The method includes contacting a carbon-based precursor, a silicon-based precursor and a boron-based precursor BX3, X being a halogen atom, to obtain a mixture of these three precursors. The resulting mixture is subjected to laser pyrolysis. The boron-based precursor BX3 is heated, prior to the contacting step and/or simultaneously with the contacting step, to a temperature higher than the condensation temperature of the precursor.

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    / METHOD FOR PREPARING A POWDER COMPRISING CARBON SILICON AND BORON THE SILICON BEING IN SILICON CARBIDE FORM AND THE BORON BEING IN BORON CARBIDE FORM AND/OR BORON ALONE

    본 발명은 탄소, 규소 및 붕소를 포함하는 분말을 제조하는 방법에 관련되고, 상기 규소는 탄화규소 형태이고 상기 붕소는 탄화붕소 형태 및/또는 자유 붕소 형태이고, 상기 방법은 다음 단계를 포함한다:- 탄소계 전구체, 규소계 전구체 및 붕소계 전구체(BX, 여기서 X는 할로겐 원자)를 접촉시켜 이들 세 가지 전구체의 혼합물을 얻는 단계;- 결과 혼합물을 레이저 열분해 받게 하는 단계,상기 붕소계 전구체(BX)는 상기 접촉 단계 전에 및/또는 상기 접촉 단계와 동시에 상기 전구체의 응결온도보다 높은 온도로 가열됨.

    A method is followed to prepare a powder that includes carbon, silicon and boron, the silicon being in silicon carbide form and the boron being in boron carbide and/or free boron form. The method includes contacting a carbon-based precursor, a silicon-based precursor and a boron-based precursor BX3, X being a halogen atom, to obtain a mixture of these three precursors. The resulting mixture is subjected to laser pyrolysis. The boron-based precursor BX3 is heated, prior to the contacting step and/or simultaneously with the contacting step, to a temperature higher than the condensation temperature of the precursor.

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    Title:

    / METHOD FOR PREPARING A POWDER COMPRISING CARBON SILICON AND BORON THE SILICON BEING IN SILICON CARBIDE FORM AND THE BORON BEING IN BORON CARBIDE FORM AND/OR BORON ALONE

    Additional title:

    탄화규소 및 탄화붕소 및/또는 붕소 단독 형태로 탄소와 규소와 붕소를 포함하는 분말을 제조하는 방법

    Publication date:

    2018-03-23

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    Korean

    Classification:

    IPC:  B01J Chemische oder physikalische Verfahren, z.B. Katalyse oder Kolloidchemie , CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY / B82Y Bestimmter Gebrauch oder bestimmte Anwendung von Nanostrukturen , SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES / C04B Kalk , LIME

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