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Manufacturing method of high purity silicon carbide using metal silicon and arc discharge
The present invention relates to a method for manufacturing high purity silicon carbide. The method for manufacturing the silicon carbide according to the present invention performs arc discharge by using a sintering aid containing magnesium fluoride, so that the reaction temperature is prevented from being dispersed to the outside of a reactant to improve the rate of silicon carbide formation, and side reactions are suppressed to have an excellent effect of improving the production efficiency and purity of silicon carbide.
본 발명은 고순도 탄화규소의 제조방법에 관한 것이다. 본 발명에 따른 탄화규소의 제조방법은 불화마그네슘을 포함하는 소결조제를 이용하여 아크방전을 수행함으로써, 반응온도가 반응물 외부로 분산되는 것을 차단하여 탄화규소의 생성속도를 향상시킬 수 있을 뿐만 아니라, 부반응을 억제하여 탄화규소의 제조효율 및 순도를 향상시키는 효과가 우수하다.
Manufacturing method of high purity silicon carbide using metal silicon and arc discharge
The present invention relates to a method for manufacturing high purity silicon carbide. The method for manufacturing the silicon carbide according to the present invention performs arc discharge by using a sintering aid containing magnesium fluoride, so that the reaction temperature is prevented from being dispersed to the outside of a reactant to improve the rate of silicon carbide formation, and side reactions are suppressed to have an excellent effect of improving the production efficiency and purity of silicon carbide.
본 발명은 고순도 탄화규소의 제조방법에 관한 것이다. 본 발명에 따른 탄화규소의 제조방법은 불화마그네슘을 포함하는 소결조제를 이용하여 아크방전을 수행함으로써, 반응온도가 반응물 외부로 분산되는 것을 차단하여 탄화규소의 생성속도를 향상시킬 수 있을 뿐만 아니라, 부반응을 억제하여 탄화규소의 제조효율 및 순도를 향상시키는 효과가 우수하다.
Manufacturing method of high purity silicon carbide using metal silicon and arc discharge
메탈실리콘과 아크방전을 이용한 고순도 탄화규소의 제조방법
PARK SANG YEUP (author) / SONG JUN HO (author) / LEE HA NEUL (author)
2018-04-24
Patent
Electronic Resource
Korean
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