A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED COMPACT METHOD FOR MANUFACTURING SAME SPUTTERING TARGET AND SEMICONDUCTOR DEVICE
인듐과 텅스텐과 아연을 포함하는 산화물 소결체로서, 빅스바이트(bixbite)형 결정상을 주성분으로서 포함하고, 겉보기 밀도가 6.5 g/㎤보다 크고 7.1 g/㎤ 이하이고, 인듐, 텅스텐 및 아연의 합계에 대한 텅스텐의 함유율이 1.2 원자%보다 크고 30 원자%보다 작고, 인듐, 텅스텐 및 아연의 합계에 대한 아연의 함유율이 1.2 원자%보다 크고 30 원자%보다 작은 산화물 소결체, 이것을 포함하는 스퍼터 타겟, 그리고 상기 스퍼터 타겟을 이용하여 스퍼터법에 의해 형성한 산화물 반도체막(14)을 포함하는 반도체 디바이스(10)가 제공된다.
There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm 3 and equal to or lower than 7.1 g/cm 3 , a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device (10) including an oxide semiconductor film (14) formed by a sputtering method by using the sputtering target.
OXIDE SINTERED COMPACT METHOD FOR MANUFACTURING SAME SPUTTERING TARGET AND SEMICONDUCTOR DEVICE
인듐과 텅스텐과 아연을 포함하는 산화물 소결체로서, 빅스바이트(bixbite)형 결정상을 주성분으로서 포함하고, 겉보기 밀도가 6.5 g/㎤보다 크고 7.1 g/㎤ 이하이고, 인듐, 텅스텐 및 아연의 합계에 대한 텅스텐의 함유율이 1.2 원자%보다 크고 30 원자%보다 작고, 인듐, 텅스텐 및 아연의 합계에 대한 아연의 함유율이 1.2 원자%보다 크고 30 원자%보다 작은 산화물 소결체, 이것을 포함하는 스퍼터 타겟, 그리고 상기 스퍼터 타겟을 이용하여 스퍼터법에 의해 형성한 산화물 반도체막(14)을 포함하는 반도체 디바이스(10)가 제공된다.
There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm 3 and equal to or lower than 7.1 g/cm 3 , a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device (10) including an oxide semiconductor film (14) formed by a sputtering method by using the sputtering target.
OXIDE SINTERED COMPACT METHOD FOR MANUFACTURING SAME SPUTTERING TARGET AND SEMICONDUCTOR DEVICE
산화물 소결체 및 그 제조 방법, 스퍼터 타겟, 그리고 반도체 디바이스
2019-11-08
Patent
Electronic Resource
Korean
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