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A platform for research: civil engineering, architecture and urbanism
SPUTTERING TARGET METHOD FOR MANUFACTURING SPUTTERING TARGET AND METHOD FOR FORMING THIN FILM
본 발명은 산화물 반도체를 사용하여 형성된 트랜지스터는 비정질 실리콘을 사용하여 형성된 트랜지스터에 비해 신뢰성이 떨어지는 경우가 있었다. 따라서, 본 발명에서는, 산화물 반도체를 사용하여 형성된 신뢰성이 높은 트랜지스터를 포함하는 반도체 소자를 제조한다. 결정의 c축 방향이 산화물 반도체의 상부 표면의 법선 벡터에 평행한 결정화도를 갖는 산화물 반도체를 포함하는 스퍼터링 타겟을 이용하는 스퍼터링 방법에 의해 산화물 반도체 막을 증착시킨다. 조성 비가 결정 구조를 얻을 수 있도록 원료를 혼합하여 타겟을 형성시킨다.
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
SPUTTERING TARGET METHOD FOR MANUFACTURING SPUTTERING TARGET AND METHOD FOR FORMING THIN FILM
본 발명은 산화물 반도체를 사용하여 형성된 트랜지스터는 비정질 실리콘을 사용하여 형성된 트랜지스터에 비해 신뢰성이 떨어지는 경우가 있었다. 따라서, 본 발명에서는, 산화물 반도체를 사용하여 형성된 신뢰성이 높은 트랜지스터를 포함하는 반도체 소자를 제조한다. 결정의 c축 방향이 산화물 반도체의 상부 표면의 법선 벡터에 평행한 결정화도를 갖는 산화물 반도체를 포함하는 스퍼터링 타겟을 이용하는 스퍼터링 방법에 의해 산화물 반도체 막을 증착시킨다. 조성 비가 결정 구조를 얻을 수 있도록 원료를 혼합하여 타겟을 형성시킨다.
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
SPUTTERING TARGET METHOD FOR MANUFACTURING SPUTTERING TARGET AND METHOD FOR FORMING THIN FILM
스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
2022-08-11
Patent
Electronic Resource
Korean
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