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Voltage-nonlinear resistor element and method for producing the same
A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.
Voltage-nonlinear resistor element and method for producing the same
A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.
Voltage-nonlinear resistor element and method for producing the same
ISHIKAWA MASAKI (author) / HAYASE TORU (author) / KOBAYASHI YOSHIMASA (author) / MORIMOTO KENJI (author)
2018-08-07
Patent
Electronic Resource
English
European Patent Office | 2024
|VOLTAGE NONLINEAR RESISTOR CERAMIC AND ELECTRONIC COMPONENT
European Patent Office | 2016
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