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Metal oxide film and semiconductor device
A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
Metal oxide film and semiconductor device
A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
Metal oxide film and semiconductor device
HOSAKA YASUHARU (author) / OBONAI TOSHIMITSU (author) / SHIMA YUKINORI (author) / JINTYOU MASAMI (author) / KUROSAKI DAISUKE (author) / HAMOCHI TAKASHI (author) / KOEZUKA JUNICHI (author) / OKAZAKI KENICHI (author) / YAMAZAKI SHUNPEI (author)
2020-01-14
Patent
Electronic Resource
English