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SILICON CARBIDE PRODUCTION METHOD AND SILICON CARBIDE COMPOSITE MATERIAL
Provided is a method for producing a novel silicon carbide that can be reacted at a low reaction temperature. The present invention pertains to a silicon carbide production method comprising a step for sintering a composition that at least contains: silicon nanoparticles having an average particle diameter of less than 200 nm; and a carbon-based material.
SILICON CARBIDE PRODUCTION METHOD AND SILICON CARBIDE COMPOSITE MATERIAL
Provided is a method for producing a novel silicon carbide that can be reacted at a low reaction temperature. The present invention pertains to a silicon carbide production method comprising a step for sintering a composition that at least contains: silicon nanoparticles having an average particle diameter of less than 200 nm; and a carbon-based material.
SILICON CARBIDE PRODUCTION METHOD AND SILICON CARBIDE COMPOSITE MATERIAL
MAEDA MASANORI (author) / KOHNO AZUSA (author) / IKEDA YOSHINORI (author)
2019-08-15
Patent
Electronic Resource
English
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