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Laser Induced Graphitization of Boron Carbide in Air
The localized formation of graphene and diamond like structures on the surface of boron carbide is obtained due to exposure to high intensity laser illumination. The graphitization involves water vapor interacting with the laser illuminated surface of boron carbide and leaving behind excess carbon. The process can be done on the micrometer scale, allowing for a wide range of electronic applications. Raman is a powerful and convenient technique to routinely characterize and distinguish the composition of Boron Carbide (B4C), particularly since a wide variation in C content is possible in B4C. Graphitization of 1-3 μm icosahedral B4C powder is observed at ambient conditions under illumination by a 473 nm (2.62 eV) laser during micro-Raman measurements. The graphitization, with ˜12 nm grain size, is dependent on the illumination intensity. The process is attributed to the oxidation of B4C to B2O3 by water vapor in air, and subsequent evaporation, leaving behind excess carbon. The effectiveness of this process sheds light on amorphization pathways of B4C, a critical component of resilient mechanical composites, and also enables a means to thermally produce graphitic contacts on single crystal B4C for nanoelectronics.
Laser Induced Graphitization of Boron Carbide in Air
The localized formation of graphene and diamond like structures on the surface of boron carbide is obtained due to exposure to high intensity laser illumination. The graphitization involves water vapor interacting with the laser illuminated surface of boron carbide and leaving behind excess carbon. The process can be done on the micrometer scale, allowing for a wide range of electronic applications. Raman is a powerful and convenient technique to routinely characterize and distinguish the composition of Boron Carbide (B4C), particularly since a wide variation in C content is possible in B4C. Graphitization of 1-3 μm icosahedral B4C powder is observed at ambient conditions under illumination by a 473 nm (2.62 eV) laser during micro-Raman measurements. The graphitization, with ˜12 nm grain size, is dependent on the illumination intensity. The process is attributed to the oxidation of B4C to B2O3 by water vapor in air, and subsequent evaporation, leaving behind excess carbon. The effectiveness of this process sheds light on amorphization pathways of B4C, a critical component of resilient mechanical composites, and also enables a means to thermally produce graphitic contacts on single crystal B4C for nanoelectronics.
Laser Induced Graphitization of Boron Carbide in Air
CHANDRASHEKHAR MVS (author) / LETTON JOSHUA (author) / WILLIAMS TRAVIS (author) / AJILORE ABDULGANIYU (author) / SPENCER MICHAEL (author)
2019-11-21
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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