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GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
SUNG CHIEN-MIN (author) / HU SHAO CHUNG (author) / LIN I-CHIAO (author) / YU CHIEN-PEI (author)
2020-05-21
Patent
Electronic Resource
English
IPC:
C01B
NON-METALLIC ELEMENTS
,
Nichtmetallische Elemente
/
B82Y
Bestimmter Gebrauch oder bestimmte Anwendung von Nanostrukturen
,
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS
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