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HIGH PURITY INGOT FOR WAFER PRODUCTION
A method of forming a high purity ingot for wafer production, such as a silicon carbidewafer. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with the precursors; and granular material is then formed from the fiber. The method further includes forming the ingot from the granular material. In one aspect, the chemical deposition can include laser induced chemical vapor deposition. Further, the method can include separating one or more wafers from the ingot for use in semiconductor fabrication.
HIGH PURITY INGOT FOR WAFER PRODUCTION
A method of forming a high purity ingot for wafer production, such as a silicon carbidewafer. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with the precursors; and granular material is then formed from the fiber. The method further includes forming the ingot from the granular material. In one aspect, the chemical deposition can include laser induced chemical vapor deposition. Further, the method can include separating one or more wafers from the ingot for use in semiconductor fabrication.
HIGH PURITY INGOT FOR WAFER PRODUCTION
HARRISON SHAY L (author) / SCHNEITER JOHN L (author) / PEGNA JOSEPH (author) / GODUGUCHINTA RAM K (author) / WILLIAMS KIRK L (author) / VAALER ERIK G (author)
2022-05-12
Patent
Electronic Resource
English
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