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    HIGH PERMITTIVITY ANTIFERROELECTRIC AND MANUFACTURING METHOD THEREOF

    New search for: KIM HYUNG SUK
    New search for: SHIN HYO SOON
    New search for: YEO DONG HUN
    New search for: CHOI JEOUNG SIK

    A high permittivity antiferroelectric composition and a manufacturing method thereof aim to provide an antiferroelectric, which has a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition, is sintered at low temperatures, and has a high density and a high permittivity.

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    HIGH PERMITTIVITY ANTIFERROELECTRIC AND MANUFACTURING METHOD THEREOF

    New search for: KIM HYUNG SUK
    New search for: SHIN HYO SOON
    New search for: YEO DONG HUN
    New search for: CHOI JEOUNG SIK

    A high permittivity antiferroelectric composition and a manufacturing method thereof aim to provide an antiferroelectric, which has a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition, is sintered at low temperatures, and has a high density and a high permittivity.

    Access

    Download

    HIGH PERMITTIVITY ANTIFERROELECTRIC AND MANUFACTURING METHOD THEREOF

    New search for: KIM HYUNG SUK
    New search for: SHIN HYO SOON
    New search for: YEO DONG HUN
    New search for: CHOI JEOUNG SIK

    A high permittivity antiferroelectric composition and a manufacturing method thereof aim to provide an antiferroelectric, which has a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition, is sintered at low temperatures, and has a high density and a high permittivity.

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    Download

    Access

    Download

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    HIGH PERMITTIVITY ANTIFERROELECTRIC AND MANUFACTURING METHOD THEREOF

    Contributors:

    KIM HYUNG SUK (author) / SHIN HYO SOON (author) / YEO DONG HUN (author) / CHOI JEOUNG SIK (author)

    Publication date:

    2023-09-28

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  C04B Kalk , LIME / H01G Kondensatoren , CAPACITORS

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