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CHALCOGENIDE MATERIAL AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Disclosed is a chalcogenide material including germanium (Ge), selenium (Se), arsenic (As), silicon (Si) and indium (In). In the chalcogenide material, a content of selenium (Se) is 49 at % to 56 at %, a content of indium (In) is 1.1 at % or less, and a sum of contents of germanium (Ge) and silicon (Si) is 18 at % to 21 at %.
CHALCOGENIDE MATERIAL AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Disclosed is a chalcogenide material including germanium (Ge), selenium (Se), arsenic (As), silicon (Si) and indium (In). In the chalcogenide material, a content of selenium (Se) is 49 at % to 56 at %, a content of indium (In) is 1.1 at % or less, and a sum of contents of germanium (Ge) and silicon (Si) is 18 at % to 21 at %.
CHALCOGENIDE MATERIAL AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
JUNG GWANG SUN (author) / AHN JUN KU (author) / CHO SUNG LAE (author) / HWANG UK (author)
2024-05-30
Patent
Electronic Resource
English