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A platform for research: civil engineering, architecture and urbanism
METHOD FOR PRODUCING HIGH-PURITY, DENSE SINTERED SIC MATERIAL
A polycrystalline silicon carbide sintered material includes silicon carbide grains having a median equivalent diameter of between 1 and 10 microns, the material having a total porosity of less than 2% by volume of the material, and a silicon carbide mass content of at least 99%, except for the free carbon, wherein in the material the mass ratio of the content of SiC having a beta-type crystallographic form to the content of SiC having an alpha-type crystallographic form is less than 2.
METHOD FOR PRODUCING HIGH-PURITY, DENSE SINTERED SIC MATERIAL
A polycrystalline silicon carbide sintered material includes silicon carbide grains having a median equivalent diameter of between 1 and 10 microns, the material having a total porosity of less than 2% by volume of the material, and a silicon carbide mass content of at least 99%, except for the free carbon, wherein in the material the mass ratio of the content of SiC having a beta-type crystallographic form to the content of SiC having an alpha-type crystallographic form is less than 2.
METHOD FOR PRODUCING HIGH-PURITY, DENSE SINTERED SIC MATERIAL
MASSASSO GIOVANNI (author) / BOUSQUET COSTANA (author)
2024-07-04
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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