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Nonvolatile memory characteristics of NMOSFET with siliver nanocrystals synthesized by thermal decomposition process
Nonvolatile memory characteristics are presented with Ag nanocrystals (NCs) formed by a thermal decomposition process for a Flash memory application. A size of NC and a space of NC-to-NC were precisely controlled by a size-selective precipitation technique and the length of self-assembled monolayer surrounding NCs, respectively. The size and density of Ag NCs synthesized by the thermal decomposition were typically 3–5 nm and 2.7×1012 cm−2. Nonvolatile memory operations with relatively high speed and superior endurance characteristics were reported from NMOSFETs embedding metal NCs, which were fabricated by the gate last process.
Nonvolatile memory characteristics of NMOSFET with siliver nanocrystals synthesized by thermal decomposition process
Nonvolatile memory characteristics are presented with Ag nanocrystals (NCs) formed by a thermal decomposition process for a Flash memory application. A size of NC and a space of NC-to-NC were precisely controlled by a size-selective precipitation technique and the length of self-assembled monolayer surrounding NCs, respectively. The size and density of Ag NCs synthesized by the thermal decomposition were typically 3–5 nm and 2.7×1012 cm−2. Nonvolatile memory operations with relatively high speed and superior endurance characteristics were reported from NMOSFETs embedding metal NCs, which were fabricated by the gate last process.
Nonvolatile memory characteristics of NMOSFET with siliver nanocrystals synthesized by thermal decomposition process
Seong-Wan Ryu, (author) / Chan Bin Mo, (author) / Soon Hyung Hong, (author) / Yang-Kyu Choi, (author)
2006-10-01
634331 byte
Conference paper
Electronic Resource
English
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