A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Ferromagnetic III-Mn-V semiconductors: basic issues and prospects for spintronic applications
Interest in the properties of ferromagnetic alloys of the type III1-xMnxV is primarily fueled by the promise which they hold of spin-electronic (“spintronic”) applications. Although this promise is presently tempered by the fact that the Curie temperatures of III1-xMnxV alloys are still below 200K, progress in understanding the fundamental physics of these materials has been made on many fronts, which can in turn lead to breakthroughs toward hightemperature ferromagnetism in III1-xMnxV alloys. In this paper we review the issues which determine the incorporation of Mn into the III-V lattice and of achieving high doping levels of the resulting material, both of which limit the Curie temperature. We then discuss mechanisms for controlling and manipulating the magnetic anisotropy of these materials, an issue that is of particular importance for the design of spininjection- based devices; and we use our recent results on Ga1-xMnxAs films grown on vicinal (tilted) GaAs substrates as an illustration of the wide range of spinbased device opportunities that can be based on III1-xMnxV alloys as further progress is made in understanding and optimizing their properties.
Ferromagnetic III-Mn-V semiconductors: basic issues and prospects for spintronic applications
Interest in the properties of ferromagnetic alloys of the type III1-xMnxV is primarily fueled by the promise which they hold of spin-electronic (“spintronic”) applications. Although this promise is presently tempered by the fact that the Curie temperatures of III1-xMnxV alloys are still below 200K, progress in understanding the fundamental physics of these materials has been made on many fronts, which can in turn lead to breakthroughs toward hightemperature ferromagnetism in III1-xMnxV alloys. In this paper we review the issues which determine the incorporation of Mn into the III-V lattice and of achieving high doping levels of the resulting material, both of which limit the Curie temperature. We then discuss mechanisms for controlling and manipulating the magnetic anisotropy of these materials, an issue that is of particular importance for the design of spininjection- based devices; and we use our recent results on Ga1-xMnxAs films grown on vicinal (tilted) GaAs substrates as an illustration of the wide range of spinbased device opportunities that can be based on III1-xMnxV alloys as further progress is made in understanding and optimizing their properties.
Ferromagnetic III-Mn-V semiconductors: basic issues and prospects for spintronic applications
Furdyna, J. K. (author) / Liu, X. (author) / Lim, W. L. (author) / Dobrowolska, M. (author)
2006-10-01
331333 byte
Conference paper
Electronic Resource
English
Prospects of asymmetrically H-terminated zigzag germanene nanoribbons for spintronic application
| British Library Online Contents | 2017
Prospects of asymmetrically H-terminated zigzag germanene nanoribbons for spintronic application
| British Library Online Contents | 2017
Prospects of asymmetrically H-terminated zigzag germanene nanoribbons for spintronic application
| British Library Online Contents | 2017
Prospects of asymmetrically H-terminated zigzag germanene nanoribbons for spintronic application
| British Library Online Contents | 2017
| British Library Online Contents | 2015