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Defect analysis of N-doped p-type ZnO film fabricated by magnetron sputtering via photoluminescence spectra

Hu-Jie Jin, / Deok-Kyu Kim, / Choon-Bae Park,

ZnO is a promising material to make high efficient ultraviolet (UV) or blue light emitting diodes (LEDs) due to its large binding energy and energy bandgap. In present study, we prepared an N-doped p-type ZnO thin film on (100) silicon substrate by RF magnetron sputtering in the mixture ambient of N2 and O2, accompanying with in-situ annealing at low pressure of 10Torr in O2 at 800°C. Photoluminescence (PL) analysis of the film showed UV emission related to exciton and donor-acceptor pair transition (DAP) and visible emission related to various kinds of defects. Via PL spectra analysis the reason of p-type conversion of ZnO thin film can be explained, which is in favor of getting high quality p-type ZnO films.

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Defect analysis of N-doped p-type ZnO film fabricated by magnetron sputtering via photoluminescence spectra

Hu-Jie Jin, / Deok-Kyu Kim, / Choon-Bae Park,

ZnO is a promising material to make high efficient ultraviolet (UV) or blue light emitting diodes (LEDs) due to its large binding energy and energy bandgap. In present study, we prepared an N-doped p-type ZnO thin film on (100) silicon substrate by RF magnetron sputtering in the mixture ambient of N2 and O2, accompanying with in-situ annealing at low pressure of 10Torr in O2 at 800°C. Photoluminescence (PL) analysis of the film showed UV emission related to exciton and donor-acceptor pair transition (DAP) and visible emission related to various kinds of defects. Via PL spectra analysis the reason of p-type conversion of ZnO thin film can be explained, which is in favor of getting high quality p-type ZnO films.

Defect analysis of N-doped p-type ZnO film fabricated by magnetron sputtering via photoluminescence spectra

Hu-Jie Jin, / Deok-Kyu Kim, / Choon-Bae Park,

ZnO is a promising material to make high efficient ultraviolet (UV) or blue light emitting diodes (LEDs) due to its large binding energy and energy bandgap. In present study, we prepared an N-doped p-type ZnO thin film on (100) silicon substrate by RF magnetron sputtering in the mixture ambient of N2 and O2, accompanying with in-situ annealing at low pressure of 10Torr in O2 at 800°C. Photoluminescence (PL) analysis of the film showed UV emission related to exciton and donor-acceptor pair transition (DAP) and visible emission related to various kinds of defects. Via PL spectra analysis the reason of p-type conversion of ZnO thin film can be explained, which is in favor of getting high quality p-type ZnO films.

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Title:

Defect analysis of N-doped p-type ZnO film fabricated by magnetron sputtering via photoluminescence spectra

Contributors:

Hu-Jie Jin, (author) / Deok-Kyu Kim, (author) / Choon-Bae Park, (author)

Published in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 542-543

Publication date:

2006-10-01

Size:

419580 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388893

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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