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Copper-phthalocyanine based organic thin film transistor

Kwak, T. H. / Kang, H. S. / Kim, K. / Cho, M. Y. / Lee, J. W. / Joo, J.

Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22×10⁻³ cm²/Vs and −40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.

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Copper-phthalocyanine based organic thin film transistor

Kwak, T. H. / Kang, H. S. / Kim, K. / Cho, M. Y. / Lee, J. W. / Joo, J.

Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22×10⁻³ cm²/Vs and −40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.

Copper-phthalocyanine based organic thin film transistor

Kwak, T. H. / Kang, H. S. / Kim, K. / Cho, M. Y. / Lee, J. W. / Joo, J.

Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22×10⁻³ cm²/Vs and −40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.

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Title:

Copper-phthalocyanine based organic thin film transistor

Contributors:

Kwak, T. H. (author) / Kang, H. S. (author) / Kim, K. (author) / Cho, M. Y. (author) / Lee, J. W. (author) / Joo, J. (author)

Published in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 630-631

Publication date:

2006-10-01

Size:

1025723 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388937

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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