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Recent advances in SOI materials and device technologies for high temperature
The present status of silicon-on-insulator (SOI) technologies, structures and devices is reviewed with the aim of demonstrating the attractiveness of CMOS SOI for high-temperature applications. The basic MOSFET parameters (leakage current, threshold voltage, carrier mobility and subthreshold swing) are described as a function of temperature up to 300/spl deg/C. The temperature behaviour of more specific SOI mechanisms, induced by the floating body, interface coupling and parasitic bipolar transistor, is also discussed.
Recent advances in SOI materials and device technologies for high temperature
The present status of silicon-on-insulator (SOI) technologies, structures and devices is reviewed with the aim of demonstrating the attractiveness of CMOS SOI for high-temperature applications. The basic MOSFET parameters (leakage current, threshold voltage, carrier mobility and subthreshold swing) are described as a function of temperature up to 300/spl deg/C. The temperature behaviour of more specific SOI mechanisms, induced by the floating body, interface coupling and parasitic bipolar transistor, is also discussed.
Recent advances in SOI materials and device technologies for high temperature
Cristoloveanu, S. (author) / Reichert, G. (author)
1998-01-01
781350 byte
Conference paper
Electronic Resource
English
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