A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
A review of technologies for GaAs high temperature electronic devices and integrated circuits is presented. Starting with the high temperature related material properties of GaAs and related heterostructures, key issues for GaAs-based high temperature devices are identified and state of the art solutions are discussed. This includes, for example, high temperature stable metallizations, technologies for substrate leakage reduction and other topics. Based on these results, the most important transistor technologies for high temperature applications (MESFETs, HFETs, HEMTs, JFETs and HBTs) are introduced and compared. The paper closes with a short review of analogue and microwave integrated circuits operating at high temperatures.
A review of technologies for GaAs high temperature electronic devices and integrated circuits is presented. Starting with the high temperature related material properties of GaAs and related heterostructures, key issues for GaAs-based high temperature devices are identified and state of the art solutions are discussed. This includes, for example, high temperature stable metallizations, technologies for substrate leakage reduction and other topics. Based on these results, the most important transistor technologies for high temperature applications (MESFETs, HFETs, HEMTs, JFETs and HBTs) are introduced and compared. The paper closes with a short review of analogue and microwave integrated circuits operating at high temperatures.
Recent advances in GaAs devices for use at high temperatures
Wurfl, J. (author)
1998-01-01
1238760 byte
Conference paper
Electronic Resource
English
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