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Growth of nickel silicide nanowires by chemical vapor deposition
We report the growth process of Ni-silicide nanowires by chemical vapor deposition using SiH4 as a precursor. We have found systematic variation of shapes and compositions of Nisilicide nanostructures from thin films to nanowires with growth variables such as growth temperature and SiH4 partial pressure. Based upon one-dimensional Ni diffusion model, we discuss the growth mechanism of Ni-silicide nanowire.
Growth of nickel silicide nanowires by chemical vapor deposition
We report the growth process of Ni-silicide nanowires by chemical vapor deposition using SiH4 as a precursor. We have found systematic variation of shapes and compositions of Nisilicide nanostructures from thin films to nanowires with growth variables such as growth temperature and SiH4 partial pressure. Based upon one-dimensional Ni diffusion model, we discuss the growth mechanism of Ni-silicide nanowire.
Growth of nickel silicide nanowires by chemical vapor deposition
Chang-Beom Jin, (author) / Cheol-Joo Kim, (author) / Moon-Ho Jo, (author)
2006-10-01
503605 byte
Conference paper
Electronic Resource
English
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