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Effects of Stress on the Electrical Characteristics of Tunnel Diodes
The effects of uniaxial compression and of hydrostatic pressure on the indirect tunneling process in germanium and silicon tunnel junctions under forward bias at room temperature were studied. (Author)
Effects of Stress on the Electrical Characteristics of Tunnel Diodes
The effects of uniaxial compression and of hydrostatic pressure on the indirect tunneling process in germanium and silicon tunnel junctions under forward bias at room temperature were studied. (Author)
Effects of Stress on the Electrical Characteristics of Tunnel Diodes
H. S. Lee (author) / E. M. Boone (author)
1964
205 pages
Report
No indication
English
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