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Passivation of InAs and GaSb with High 954; Dielectrics - Growth, Structural, Chemical and Electrical Characterization

M. Hong / J. R. Kwo

This is the final report of a project in which chemical and electronic characteristics on Al2O3/Gd2O3/InAs interfaces were studied using x- ray photoelectron spectroscopy.

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Passivation of InAs and GaSb with High 954; Dielectrics - Growth, Structural, Chemical and Electrical Characterization

M. Hong / J. R. Kwo

This is the final report of a project in which chemical and electronic characteristics on Al2O3/Gd2O3/InAs interfaces were studied using x- ray photoelectron spectroscopy.

Passivation of InAs and GaSb with High 954; Dielectrics - Growth, Structural, Chemical and Electrical Characterization

M. Hong / J. R. Kwo

This is the final report of a project in which chemical and electronic characteristics on Al2O3/Gd2O3/InAs interfaces were studied using x- ray photoelectron spectroscopy.

Access

Check availability in my library

Page navigation

Document information

Export, share and cite

Document information

Title:

Passivation of InAs and GaSb with High 954; Dielectrics - Growth, Structural, Chemical and Electrical Characterization

Contributors:

M. Hong (author) / J. R. Kwo (author)

Publication date:

2011

Size:

4 pages

Type of media:

Report

Type of material:

No indication

Language:

English

Keywords:

Basic & Synthetic Chemistry , Physics , Physical & Theoretical Chemistry , X ray photoelectron spectroscopy , Gallium antimonides , Indium arsenides , Dielectrics , Passivity , Taiwan , Chemical properties , Electronics , Indium arsenide , Gallium antimonide , Ald-mbe integration , Foreign reports

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