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Density of states and barrier height of metal-Si contacts

Yndurain, F.

Abstract Using the surface Green function method of Garcia-Moliner and Rubio the extra density of states of metal-Si(l 10) contacts is studied in detail. This is then used to calculate the barrier height for a wide range of Sommerfeld metals. The surface position of the Fermi level relative to the band edges of the semiconductor depends on both the work function and the Fermi energy of the metal. Some arguments are put forward to the effect that a similar behaviour is expected for crystallographic orientations of the Si surface other than the (110). The calculations are actually in fair agreement with experimental data on (111) surfaces.

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Density of states and barrier height of metal-Si contacts

Yndurain, F.

Abstract Using the surface Green function method of Garcia-Moliner and Rubio the extra density of states of metal-Si(l 10) contacts is studied in detail. This is then used to calculate the barrier height for a wide range of Sommerfeld metals. The surface position of the Fermi level relative to the band edges of the semiconductor depends on both the work function and the Fermi energy of the metal. Some arguments are put forward to the effect that a similar behaviour is expected for crystallographic orientations of the Si surface other than the (110). The calculations are actually in fair agreement with experimental data on (111) surfaces.

Density of states and barrier height of metal-Si contacts

Yndurain, F.

Abstract Using the surface Green function method of Garcia-Moliner and Rubio the extra density of states of metal-Si(l 10) contacts is studied in detail. This is then used to calculate the barrier height for a wide range of Sommerfeld metals. The surface position of the Fermi level relative to the band edges of the semiconductor depends on both the work function and the Fermi energy of the metal. Some arguments are put forward to the effect that a similar behaviour is expected for crystallographic orientations of the Si surface other than the (110). The calculations are actually in fair agreement with experimental data on (111) surfaces.

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Title:

Density of states and barrier height of metal-Si contacts

Contributors:

Yndurain, F. (author)

Published in:

Electronic Structure of Metal-Semiconductor Contacts ; 95-104

Perspectives in Condensed Matter Physics ; 4

Publication date:

1990-01-01

Size:

10 pages

ISBN:

978-94-010-6780-5 , 978-94-009-0657-0

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-0657-0_11

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Physics , Physics, general , Surfaces and Interfaces, Thin Films , Physical Chemistry , Electrical Engineering , Condensed Matter Physics

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