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    Defects and Impurities

    New search for: Dr. Lannoo, Michel

    Abstract The main objective of this chapter is to analyze the influence of the quantum confinement on the electronic levels of point defects and impurities, from quantum wells to quantum dots. In the first two parts, we present the general trends for hydrogenic and deep defects. In the next sections, we consider particular situations: dangling bonds, self-trapped excitons and oxygen related defects at the Si-SiO2 interface.

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    Defects and Impurities

    New search for: Dr. Lannoo, Michel

    Abstract The main objective of this chapter is to analyze the influence of the quantum confinement on the electronic levels of point defects and impurities, from quantum wells to quantum dots. In the first two parts, we present the general trends for hydrogenic and deep defects. In the next sections, we consider particular situations: dangling bonds, self-trapped excitons and oxygen related defects at the Si-SiO2 interface.

    Access

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    Order at Subito €

    Defects and Impurities

    New search for: Dr. Lannoo, Michel

    Abstract The main objective of this chapter is to analyze the influence of the quantum confinement on the electronic levels of point defects and impurities, from quantum wells to quantum dots. In the first two parts, we present the general trends for hydrogenic and deep defects. In the next sections, we consider particular situations: dangling bonds, self-trapped excitons and oxygen related defects at the Si-SiO2 interface.

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    Title:

    Defects and Impurities

    Contributors:

    Dr. Delerue, Christophe (author) / Dr. Lannoo, Michel (author)

    Published in:

    Nanostructures ; 195-218

    NanoScience and Technology

    Publication date:

    2004-01-01

    Size:

    24 pages

    ISBN:

    978-3-642-05847-9 , 978-3-662-08903-3

    ISSN:

    1434-4904

    DOI:

    https://doi.org/10.1007/978-3-662-08903-3_6

    Type of media:

    Article/Chapter (Book)

    Type of material:

    Electronic Resource

    Language:

    English

    Keywords:

    High Occupied Molecular Orbit , Porous Silicon , Lower Unoccupied Molecular Orbit , Local Density Approximation , Tight Binding Engineering , Nanotechnology and Microengineering , Nanotechnology , Numerical and Computational Physics , Quantum Optics

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