Atomic Structure of 6H-SiC (0001) and (000<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="978-3-642-56949-4_3_Chapter_TeX2GIF_IEq1.gif" Format="GIF" Rendition="HTML" Type="Linedraw" /> </InlineMediaObject> <EquationSource Format="TEX">$$\bar{1}$$</EquationSource> </InlineEquation>): Fid-Bau Portal

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Atomic Structure of 6H-SiC (0001) and (000 $$\bar{1}$$ )

Li, L. / Sakurai, T.

Summary In this paper we present a critical review of the current status of surface studies on 6H-SiC (0001) and (000 $$\bar{1}$$ ). The article is divided into three major sections. The first consists of a summary of surface preparation procedures and the experimental methods used for the work covered by this article. This is followed by a discussion of the progress which has been made in the determination of the atomic structure and composition of the numerous surface phases of clean 6H crystals. Finally we describe work on surface phonons of 6H-SiC (0001) and adsorption of Ga on the SiC surface as related to developments in the use of 6H-SiC as substrate for growth of III-nitrides.

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Atomic Structure of 6H-SiC (0001) and (000 $$\bar{1}$$ )

Li, L. / Sakurai, T.

Summary In this paper we present a critical review of the current status of surface studies on 6H-SiC (0001) and (000 $$\bar{1}$$ ). The article is divided into three major sections. The first consists of a summary of surface preparation procedures and the experimental methods used for the work covered by this article. This is followed by a discussion of the progress which has been made in the determination of the atomic structure and composition of the numerous surface phases of clean 6H crystals. Finally we describe work on surface phonons of 6H-SiC (0001) and adsorption of Ga on the SiC surface as related to developments in the use of 6H-SiC as substrate for growth of III-nitrides.

Atomic Structure of 6H-SiC (0001) and (000 $$\bar{1}$$ )

Li, L. / Sakurai, T.

Summary In this paper we present a critical review of the current status of surface studies on 6H-SiC (0001) and (000 $$\bar{1}$$ ). The article is divided into three major sections. The first consists of a summary of surface preparation procedures and the experimental methods used for the work covered by this article. This is followed by a discussion of the progress which has been made in the determination of the atomic structure and composition of the numerous surface phases of clean 6H crystals. Finally we describe work on surface phonons of 6H-SiC (0001) and adsorption of Ga on the SiC surface as related to developments in the use of 6H-SiC as substrate for growth of III-nitrides.

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Title:

Atomic Structure of 6H-SiC (0001) and (000 $$\bar{1}$$ )

Contributors:

Li, L. (author) / Sakurai, T. (author)

Published in:

Advances in Scanning Probe Microscopy ; 65-90

Advances in Materials Research ; 2

Publication date:

2000-01-01

Size:

26 pages

ISBN:

978-3-642-56949-4 , 978-3-642-63084-2

ISSN:

DOI:

https://doi.org/10.1007/978-3-642-56949-4_3

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Bright Spot , Dangling Bond , Contrast Reversal , Vacancy Model , Centered Hexagon Engineering , Electronics and Microelectronics, Instrumentation , Science, general , Materials Science, general , Surfaces and Interfaces, Thin Films , Optical and Electronic Materials , Solid State Physics

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