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{111} Surfaces of Compounds with Zincblende Structure
Abstract Bulk-terminated {111}–1 × 1 surfaces of zincblende-structure compounds would be either cation- or anion-terminated. Such [111]- and [111]-oriented surfaces, respectively, are found to be 2 × 2-reconstructed. The GaAs(111)–2×2 structure results from the existence of Ga vacancies which expose three As atoms of the second layer. The atomic arrangement is thus similar to the Ga-As zigzag chains on cleaved (110)–1 × 1 surfaces. The GaAs(111)–2 × 2 reconstruction, on the other hand, consists of As-trimers on a complete As layer beneath. The presence of As vacancies is excluded since their formation is endothermic on such surfaces.
{111} Surfaces of Compounds with Zincblende Structure
Abstract Bulk-terminated {111}–1 × 1 surfaces of zincblende-structure compounds would be either cation- or anion-terminated. Such [111]- and [111]-oriented surfaces, respectively, are found to be 2 × 2-reconstructed. The GaAs(111)–2×2 structure results from the existence of Ga vacancies which expose three As atoms of the second layer. The atomic arrangement is thus similar to the Ga-As zigzag chains on cleaved (110)–1 × 1 surfaces. The GaAs(111)–2 × 2 reconstruction, on the other hand, consists of As-trimers on a complete As layer beneath. The presence of As vacancies is excluded since their formation is endothermic on such surfaces.
{111} Surfaces of Compounds with Zincblende Structure
Professor Dr. Mönch, Winfried (author)
Third, Revised Edition
2001-01-01
7 pages
Article/Chapter (Book)
Electronic Resource
English
Scan Tunneling Microscopy Image , Zincblende Structure , Surface Anion , Vacancy Model , Unit Mesh Chemistry , Physical Chemistry , Optics and Electrodynamics , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Optical and Electronic Materials , Characterization and Evaluation of Materials
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