A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Surface Passivation by Adsorbates and Surfactants
Abstract Saturation of all dangling bonds on semiconductor surfaces strongly reduces their free energy. This results in a passivation against chemisorption of ad-sorbates. Hydrogen-coverage, for example, increases the initial sticking coefficient of oxygen, on silicon surfaces by a factor of approximately 1013 with respect to what is found on clean silicon surfaces. This behavior is explained by the larger Si-H bond energies in comparison with the Si-Si bond strength. A reduction of the surface free energy may also be used to alter the growth mode of overlayers from island formation to layer-by-layer growth. At the deposition temperature, the solubility of the passivating adatoms has to be small in the bulk of the growing film so that they will segregate on the surface of the growing film. The passivating adatoms then behave as a surface-active species or a surfactant.
Surface Passivation by Adsorbates and Surfactants
Abstract Saturation of all dangling bonds on semiconductor surfaces strongly reduces their free energy. This results in a passivation against chemisorption of ad-sorbates. Hydrogen-coverage, for example, increases the initial sticking coefficient of oxygen, on silicon surfaces by a factor of approximately 1013 with respect to what is found on clean silicon surfaces. This behavior is explained by the larger Si-H bond energies in comparison with the Si-Si bond strength. A reduction of the surface free energy may also be used to alter the growth mode of overlayers from island formation to layer-by-layer growth. At the deposition temperature, the solubility of the passivating adatoms has to be small in the bulk of the growing film so that they will segregate on the surface of the growing film. The passivating adatoms then behave as a surface-active species or a surfactant.
Surface Passivation by Adsorbates and Surfactants
Professor Dr. Mönch, Winfried (author)
Third, Revised Edition
2001-01-01
8 pages
Article/Chapter (Book)
Electronic Resource
English
Surface Free Energy , Silicon Surface , Misfit Dislocation , Surface Passivation , Semiconductor Surface Chemistry , Physical Chemistry , Optics and Electrodynamics , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Optical and Electronic Materials , Characterization and Evaluation of Materials
Passivation of semipolar (10-1-1) GaN with different organic adsorbates
| British Library Online Contents | 2019
Passivation of semipolar (10-1-1) GaN with different organic adsorbates
| British Library Online Contents | 2019
Passivation of semipolar (10-1-1) GaN with different organic adsorbates
| British Library Online Contents | 2019
Stable reconstruction and adsorbates of InAs(111)A surface
| British Library Online Contents | 2006
The Theory of SEELFS from Adsorbates
| Springer Verlag | 1988