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The formation of the Schottky barrier at the V/Si interfacea)
Abstract Synchrotron radiation photoemission measurements have been used to study the behavior of the Schottky barrier height φ bn and electronic structure of the V/Si interface for both cleaved Si(111)- (2X1) and sputter-cleaned Si(111)—(7 X 7) surfaces. Although the Schottky barrier height φ bn of the clean surface is influenced by surface reconstruction (and by steps), the barrier becomes pinned at low (~ 2 Å) V coverage at a position essentially independent of the initial clean surface structure. Formation of the bulk V metal band structure is not complete until ∼ 30–40 Å V coverage, indicating coverage-dependent structural effects in the growth of the metal film. These effects also seem to produce secondary influences on φ bn ,which are manifested as a gradual increase of φ bn ,with higher coverage or mild (~200°C) annealing. However, upon higher temperature annealing (>350°C) the trend reverses, with φ bn decreasing to a value (∼0.64 eV) characteristic of the bulk VSi2contact which is formed at 500–550 °C; this change in the behavior of φ bn is directly correlated with the onset of atomic mixing across the interface.
The formation of the Schottky barrier at the V/Si interfacea)
Abstract Synchrotron radiation photoemission measurements have been used to study the behavior of the Schottky barrier height φ bn and electronic structure of the V/Si interface for both cleaved Si(111)- (2X1) and sputter-cleaned Si(111)—(7 X 7) surfaces. Although the Schottky barrier height φ bn of the clean surface is influenced by surface reconstruction (and by steps), the barrier becomes pinned at low (~ 2 Å) V coverage at a position essentially independent of the initial clean surface structure. Formation of the bulk V metal band structure is not complete until ∼ 30–40 Å V coverage, indicating coverage-dependent structural effects in the growth of the metal film. These effects also seem to produce secondary influences on φ bn ,which are manifested as a gradual increase of φ bn ,with higher coverage or mild (~200°C) annealing. However, upon higher temperature annealing (>350°C) the trend reverses, with φ bn decreasing to a value (∼0.64 eV) characteristic of the bulk VSi2contact which is formed at 500–550 °C; this change in the behavior of φ bn is directly correlated with the onset of atomic mixing across the interface.
The formation of the Schottky barrier at the V/Si interfacea)
Clabes, J. G. (author) / Rubloff, G. W. (author) / Reihl, B. (author) / Purtell, R. J. (author) / Ho, P. S. (author) / Zartner, A. (author) / Himpsel, F. J. (author) / Eastman, D. E. (author)
1990-01-01
4 pages
Article/Chapter (Book)
Electronic Resource
English
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