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Carrier Excitation Yield from Atomic Collisions at Semiconductor Surfaces

Weiss, P. S. / Amirav, A. / Trevor, P. L. / Cardillo, M. J.

Abstract We have furthered our understanding of the collisional excitation of carriers at semiconductor surfaces by hyperthermal neutral rare gas atoms. We have introduced optical carrier excitation in order to characterize the samples, to determine carrier recombination rates, and to calibrate the collisional e−h+ excitation probability for Xe on the InP(110) surface.

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Carrier Excitation Yield from Atomic Collisions at Semiconductor Surfaces

Weiss, P. S. / Amirav, A. / Trevor, P. L. / Cardillo, M. J.

Abstract We have furthered our understanding of the collisional excitation of carriers at semiconductor surfaces by hyperthermal neutral rare gas atoms. We have introduced optical carrier excitation in order to characterize the samples, to determine carrier recombination rates, and to calibrate the collisional e−h+ excitation probability for Xe on the InP(110) surface.

Carrier Excitation Yield from Atomic Collisions at Semiconductor Surfaces

Weiss, P. S. / Amirav, A. / Trevor, P. L. / Cardillo, M. J.

Abstract We have furthered our understanding of the collisional excitation of carriers at semiconductor surfaces by hyperthermal neutral rare gas atoms. We have introduced optical carrier excitation in order to characterize the samples, to determine carrier recombination rates, and to calibrate the collisional e−h+ excitation probability for Xe on the InP(110) surface.

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Title:

Carrier Excitation Yield from Atomic Collisions at Semiconductor Surfaces

Contributors:

Weiss, P. S. (author) / Amirav, A. (author) / Trevor, P. L. (author) / Cardillo, M. J. (author)

Published in:

Solvay Conference on Surface Science ; 297-303

Springer Series in Surface Sciences ; 14

Publication date:

1988-01-01

Size:

7 pages

ISBN:

978-3-642-74220-0 , 978-3-642-74218-7

ISSN:

DOI:

https://doi.org/10.1007/978-3-642-74218-7_25

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Incident Energy , Carrier Lifetime , Surface Recombination Velocity , Electronic Equilibration , Excitation Probability Physics , Surface and Interface Science, Thin Films , Surfaces and Interfaces, Thin Films

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