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Ionicity and the theory of Schottky barriers

Louie, Steven G. / Chelikowsky, James R. / Cohen, Marvin L.

Abstract We have investigated the role of ionicity in metal-semiconductor Schottky barriers by examining interfaces of increasing semiconductor ionicity. The electronic structure of four separate interfaces consisting of jellium (of Al density) in contact with the (111) surface of Si and the (110) surfaces of GaAs, ZnSe, and ZnS is investigated through the use of a self-consistent pseudopotential method. The barrier height and the surface density of states in the semiconductor band gap are determined. The phenomenological index of interface behavior S (studied by Kurtin, McGill, and Mead for semiconductors of different ionicity) is discussed in terms of a simple model involving metal-induced states in the semiconductor gap.

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Ionicity and the theory of Schottky barriers

Louie, Steven G. / Chelikowsky, James R. / Cohen, Marvin L.

Abstract We have investigated the role of ionicity in metal-semiconductor Schottky barriers by examining interfaces of increasing semiconductor ionicity. The electronic structure of four separate interfaces consisting of jellium (of Al density) in contact with the (111) surface of Si and the (110) surfaces of GaAs, ZnSe, and ZnS is investigated through the use of a self-consistent pseudopotential method. The barrier height and the surface density of states in the semiconductor band gap are determined. The phenomenological index of interface behavior S (studied by Kurtin, McGill, and Mead for semiconductors of different ionicity) is discussed in terms of a simple model involving metal-induced states in the semiconductor gap.

Ionicity and the theory of Schottky barriers

Louie, Steven G. / Chelikowsky, James R. / Cohen, Marvin L.

Abstract We have investigated the role of ionicity in metal-semiconductor Schottky barriers by examining interfaces of increasing semiconductor ionicity. The electronic structure of four separate interfaces consisting of jellium (of Al density) in contact with the (111) surface of Si and the (110) surfaces of GaAs, ZnSe, and ZnS is investigated through the use of a self-consistent pseudopotential method. The barrier height and the surface density of states in the semiconductor band gap are determined. The phenomenological index of interface behavior S (studied by Kurtin, McGill, and Mead for semiconductors of different ionicity) is discussed in terms of a simple model involving metal-induced states in the semiconductor gap.

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Title:

Ionicity and the theory of Schottky barriers

Contributors:

Louie, Steven G. (author) / Chelikowsky, James R. (author) / Cohen, Marvin L. (author)

Published in:

Electronic Structure of Metal-Semiconductor Contacts ; 125-133

Perspectives in Condensed Matter Physics ; 4

Publication date:

1990-01-01

Size:

9 pages

ISBN:

978-94-010-6780-5 , 978-94-009-0657-0

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-0657-0_14

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Barrier Height , Interface State , Schottky Barrier , Semiconductor Surface , Metal Overlayers Physics , Physics, general , Surfaces and Interfaces, Thin Films , Physical Chemistry , Electrical Engineering , Condensed Matter Physics

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