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The Epitaxial Growth of Nickel on Cu(100) Studied by Ion Channeling

Alkemade, P. F. A. / Fortuin, H. / Balkenende, R. / Habraken, F. H. P. M. / Weg, W. F.

Abstract A mixed nickel-copper film with a thickness of 1.5 nm, and an almost pure nickel film with a thickness of 10 nm, are grown by nickel carbonyl decomposition on a Cu(100) surface. High-energy ion channeling and LEED reveal that both films have grown epitaxially. The growth of the 1.5 nm, mixed film is pseudomorphic and the misfit between the film and the substrate is accommodated by elastic strain only. The magnitude of the strain is in accordance with the Equilibrium Theory of Frank and Van der Merwe. Strain and misfit dislocations accommodate the misfit between the 10 nm film and its substrate. The strain is initially larger than theoretically expected, but it is reduced to its expected value by annealing.

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The Epitaxial Growth of Nickel on Cu(100) Studied by Ion Channeling

Alkemade, P. F. A. / Fortuin, H. / Balkenende, R. / Habraken, F. H. P. M. / Weg, W. F.

Abstract A mixed nickel-copper film with a thickness of 1.5 nm, and an almost pure nickel film with a thickness of 10 nm, are grown by nickel carbonyl decomposition on a Cu(100) surface. High-energy ion channeling and LEED reveal that both films have grown epitaxially. The growth of the 1.5 nm, mixed film is pseudomorphic and the misfit between the film and the substrate is accommodated by elastic strain only. The magnitude of the strain is in accordance with the Equilibrium Theory of Frank and Van der Merwe. Strain and misfit dislocations accommodate the misfit between the 10 nm film and its substrate. The strain is initially larger than theoretically expected, but it is reduced to its expected value by annealing.

The Epitaxial Growth of Nickel on Cu(100) Studied by Ion Channeling

Alkemade, P. F. A. / Fortuin, H. / Balkenende, R. / Habraken, F. H. P. M. / Weg, W. F.

Abstract A mixed nickel-copper film with a thickness of 1.5 nm, and an almost pure nickel film with a thickness of 10 nm, are grown by nickel carbonyl decomposition on a Cu(100) surface. High-energy ion channeling and LEED reveal that both films have grown epitaxially. The growth of the 1.5 nm, mixed film is pseudomorphic and the misfit between the film and the substrate is accommodated by elastic strain only. The magnitude of the strain is in accordance with the Equilibrium Theory of Frank and Van der Merwe. Strain and misfit dislocations accommodate the misfit between the 10 nm film and its substrate. The strain is initially larger than theoretically expected, but it is reduced to its expected value by annealing.

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Title:

The Epitaxial Growth of Nickel on Cu(100) Studied by Ion Channeling

Contributors:

Alkemade, P. F. A. (author) / Fortuin, H. (author) / Balkenende, R. (author) / Habraken, F. H. P. M. (author) / Weg, W. F. (author)

Published in:

The Structure of Surfaces II ; 443-449

Springer Series in Surface Sciences ; 11

Publication date:

1988-01-01

Size:

7 pages

ISBN:

978-3-642-73345-1 , 978-3-642-73343-7

ISSN:

DOI:

https://doi.org/10.1007/978-3-642-73343-7_73

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Epitaxial Growth , Misfit Dislocation , Copper Substrate , Equilibrium Theory , Nickel Film Physics , Surface and Interface Science, Thin Films , Surfaces and Interfaces, Thin Films , Crystallography

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