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Metallization and Scottky Contacts
Abstract Results of self-consistent electronic-structure calculations of aluminum deposited on Ge, as a function of metal coverage, provide strong evidence for overlayer metallization. At monolayer metal coverages, the overlayer changes into a (quasi-) two-dimensional metal characterized by a (modulated) ladder-type density of states. The origin of this transition is traced to the metal-semiconductor interlayer-distance relaxation upon metallization. Our results are in agreement with recent experimental observations, and have important implications for Schottky-barrier formation.
Metallization and Scottky Contacts
Abstract Results of self-consistent electronic-structure calculations of aluminum deposited on Ge, as a function of metal coverage, provide strong evidence for overlayer metallization. At monolayer metal coverages, the overlayer changes into a (quasi-) two-dimensional metal characterized by a (modulated) ladder-type density of states. The origin of this transition is traced to the metal-semiconductor interlayer-distance relaxation upon metallization. Our results are in agreement with recent experimental observations, and have important implications for Schottky-barrier formation.
Metallization and Scottky Contacts
Batra, Inder P. (author) / Ciraci, S. (author)
1990-01-01
3 pages
Article/Chapter (Book)
Electronic Resource
English
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