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Rutherford Backscattering and Nuclear Reaction Analysis Study of Plasma Oxidation of Silicides

Climent, A. / Perez-Casero, R. / Perriere, J. / Enard, J. P. / Lavernhe, B.

Abstract The possibility of growing thick oxide films on refractory metal silicides by plasma oxidation; anodic at room temperature (1) (2), or at floating potential in the 500 and 900° C temperature range has been demonstrated (3). In all this work Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectrometry (RBS) were used to determine the oxide composition. In the present work we describe with some detail these analytical techniques, specially NRA, and show how quantitative information can be obtained with the help of a simulating program for RBS spectra in the study of the plasma oxidation at floating potential of TiSix and WSiy. Details concerning sample preparation and the plasma system are describe elsewhere (3). The metal-Si mixtures were deliberately made richer in Si than the stoichimetric value (TiSi2, WSi2) in order to transform the excess Si of the mixture in SiO2 until the low resistivity stoichimetric phase is reached.

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Rutherford Backscattering and Nuclear Reaction Analysis Study of Plasma Oxidation of Silicides

Climent, A. / Perez-Casero, R. / Perriere, J. / Enard, J. P. / Lavernhe, B.

Abstract The possibility of growing thick oxide films on refractory metal silicides by plasma oxidation; anodic at room temperature (1) (2), or at floating potential in the 500 and 900° C temperature range has been demonstrated (3). In all this work Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectrometry (RBS) were used to determine the oxide composition. In the present work we describe with some detail these analytical techniques, specially NRA, and show how quantitative information can be obtained with the help of a simulating program for RBS spectra in the study of the plasma oxidation at floating potential of TiSix and WSiy. Details concerning sample preparation and the plasma system are describe elsewhere (3). The metal-Si mixtures were deliberately made richer in Si than the stoichimetric value (TiSi2, WSi2) in order to transform the excess Si of the mixture in SiO2 until the low resistivity stoichimetric phase is reached.

Rutherford Backscattering and Nuclear Reaction Analysis Study of Plasma Oxidation of Silicides

Climent, A. / Perez-Casero, R. / Perriere, J. / Enard, J. P. / Lavernhe, B.

Abstract The possibility of growing thick oxide films on refractory metal silicides by plasma oxidation; anodic at room temperature (1) (2), or at floating potential in the 500 and 900° C temperature range has been demonstrated (3). In all this work Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectrometry (RBS) were used to determine the oxide composition. In the present work we describe with some detail these analytical techniques, specially NRA, and show how quantitative information can be obtained with the help of a simulating program for RBS spectra in the study of the plasma oxidation at floating potential of TiSix and WSiy. Details concerning sample preparation and the plasma system are describe elsewhere (3). The metal-Si mixtures were deliberately made richer in Si than the stoichimetric value (TiSi2, WSi2) in order to transform the excess Si of the mixture in SiO2 until the low resistivity stoichimetric phase is reached.

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Title:

Rutherford Backscattering and Nuclear Reaction Analysis Study of Plasma Oxidation of Silicides

Contributors:

Climent, A. (author) / Perez-Casero, R. (author) / Perriere, J. (author) / Enard, J. P. (author) / Lavernhe, B. (author)

Published in:

Plasma-Surface Interactions and Processing of Materials ; 531-533

NATO ASI Series ; 176

Publication date:

1990-01-01

Size:

3 pages

ISBN:

978-94-009-1946-4 , 978-94-010-7369-1

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-1946-4_39

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Rutherford Backscatter Spectrometry , Oxide Composition , Floating Potential , Incorporated Oxygen , Plasma Oxidation Chemistry , Industrial Chemistry/Chemical Engineering , Characterization and Evaluation of Materials , Nuclear Physics, Heavy Ions, Hadrons , Physical Chemistry

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