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Phase Transitions on Silicon and Germanium {111} Surfaces
Abstract The 2×1 reconstructions observed with cleaved {111} surfaces of silicon and germanium are not stable but convert irreversibly to the Si(111)–7 × 7 and Ge(111)–c(2 × 8) structures, respectively, at elevated temperatures. At even higher temperatures, a now reversible phase transition to a “1 × 1” structure occurs. For both silicon and germanium {111} surfaces, the “1 × 1” structures consist of a quarter monolayer of disordered adatoms. During conversions of Ge(111)–c(2 × 8) surfaces, the adatoms already present only become disordered while on Si(111) surfaces corner holes and dimers as well as stacking faults have to be removed during 7×7 → “1×1” transitions. The existence of adatoms on Si(111)–”1 × 1” surfaces is attributed only to the decreased elastic constants at high temperatures. Then the lowering of the band-structure energy by a reduction of the density of adatoms by a factor of 2 compared with a factor of 2.6 for the 7×7 reconstruction obviously suffices to overcompensate the strain energy associated with the existence of adatoms only.
Phase Transitions on Silicon and Germanium {111} Surfaces
Abstract The 2×1 reconstructions observed with cleaved {111} surfaces of silicon and germanium are not stable but convert irreversibly to the Si(111)–7 × 7 and Ge(111)–c(2 × 8) structures, respectively, at elevated temperatures. At even higher temperatures, a now reversible phase transition to a “1 × 1” structure occurs. For both silicon and germanium {111} surfaces, the “1 × 1” structures consist of a quarter monolayer of disordered adatoms. During conversions of Ge(111)–c(2 × 8) surfaces, the adatoms already present only become disordered while on Si(111) surfaces corner holes and dimers as well as stacking faults have to be removed during 7×7 → “1×1” transitions. The existence of adatoms on Si(111)–”1 × 1” surfaces is attributed only to the decreased elastic constants at high temperatures. Then the lowering of the band-structure energy by a reduction of the density of adatoms by a factor of 2 compared with a factor of 2.6 for the 7×7 reconstruction obviously suffices to overcompensate the strain energy associated with the existence of adatoms only.
Phase Transitions on Silicon and Germanium {111} Surfaces
Professor Dr. Mönch, Winfried (author)
Third, Revised Edition
2001-01-01
13 pages
Article/Chapter (Book)
Electronic Resource
English
Phase Transition , Dangling Bond , Reversible Phase Transition , Irreversible Conversion , Energy Distribution Curve Chemistry , Physical Chemistry , Optics and Electrodynamics , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Optical and Electronic Materials , Characterization and Evaluation of Materials
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