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Atomic Geometry of the Si(111)√3 × √3-Sn Surface by X-ray Photoelectron and Auger Electron Diffraction
Abstract Azimuthal angle diffraction patterns of Sn 3d X-ray photoelectrons and Sn MNN Auger electrons have been measured for the Si(111)√3 × √3-sn surface. Kinematical calculations with spherical and plane wave formulae have been made to analyze the diffraction patterns. It is found that one third of a monolayer of Sn atoms form an overlayer with the vertical distance of more than ~1Å above the substrate. Although the registry of the overlayer to the substrate is not determined by the present analysis, it is reasonable to consider that the T4 or H3 model, originally proposed for the Si(111)√3 × √3-Group III metal surfaces, is appropriate for the √3×√3-Sn surface. The effect of double scattering calculations on diffraction patterns has been examined.
Atomic Geometry of the Si(111)√3 × √3-Sn Surface by X-ray Photoelectron and Auger Electron Diffraction
Abstract Azimuthal angle diffraction patterns of Sn 3d X-ray photoelectrons and Sn MNN Auger electrons have been measured for the Si(111)√3 × √3-sn surface. Kinematical calculations with spherical and plane wave formulae have been made to analyze the diffraction patterns. It is found that one third of a monolayer of Sn atoms form an overlayer with the vertical distance of more than ~1Å above the substrate. Although the registry of the overlayer to the substrate is not determined by the present analysis, it is reasonable to consider that the T4 or H3 model, originally proposed for the Si(111)√3 × √3-Group III metal surfaces, is appropriate for the √3×√3-Sn surface. The effect of double scattering calculations on diffraction patterns has been examined.
Atomic Geometry of the Si(111)√3 × √3-Sn Surface by X-ray Photoelectron and Auger Electron Diffraction
Higashiyama, K. (author) / Park, C. Y. (author) / Kono, S. (author)
1988-01-01
6 pages
Article/Chapter (Book)
Electronic Resource
English
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