Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Advances in Semiconductor Superlattices, Quantum Wells and Heterostructures

    New search for: Esaki, Leo

    Abstract In 1969, research on synthesized semiconductor superlattices was initiated with a proposal for a one-dimensional periodic structure consisting of alternating ultra-thin layers by Esaki and Tsu.1,2 Two types of superlattices: doping and compositional, were envisioned. The idea of the superlattice occurred to us while investigating the possible observation of resonant tunneling through double and multiple potential-barriers.3 In general, if characteristic dimensions such as superlattice periods and widths of potential wells in semiconductor nanostructures are reduced to less than the electron mean free path, the entire electron system will enter a quantum regime of reduced dimensionality with the presence of nearly-ideal hetero-interfaces. Our effort for the semiconductor superlattice4 is viewed as a search for novel phenomena in such a regime with engineered structures.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Advances in Semiconductor Superlattices, Quantum Wells and Heterostructures

    New search for: Esaki, Leo

    Abstract In 1969, research on synthesized semiconductor superlattices was initiated with a proposal for a one-dimensional periodic structure consisting of alternating ultra-thin layers by Esaki and Tsu.1,2 Two types of superlattices: doping and compositional, were envisioned. The idea of the superlattice occurred to us while investigating the possible observation of resonant tunneling through double and multiple potential-barriers.3 In general, if characteristic dimensions such as superlattice periods and widths of potential wells in semiconductor nanostructures are reduced to less than the electron mean free path, the entire electron system will enter a quantum regime of reduced dimensionality with the presence of nearly-ideal hetero-interfaces. Our effort for the semiconductor superlattice4 is viewed as a search for novel phenomena in such a regime with engineered structures.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Advances in Semiconductor Superlattices, Quantum Wells and Heterostructures

    New search for: Esaki, Leo

    Abstract In 1969, research on synthesized semiconductor superlattices was initiated with a proposal for a one-dimensional periodic structure consisting of alternating ultra-thin layers by Esaki and Tsu.1,2 Two types of superlattices: doping and compositional, were envisioned. The idea of the superlattice occurred to us while investigating the possible observation of resonant tunneling through double and multiple potential-barriers.3 In general, if characteristic dimensions such as superlattice periods and widths of potential wells in semiconductor nanostructures are reduced to less than the electron mean free path, the entire electron system will enter a quantum regime of reduced dimensionality with the presence of nearly-ideal hetero-interfaces. Our effort for the semiconductor superlattice4 is viewed as a search for novel phenomena in such a regime with engineered structures.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Advances in Semiconductor Superlattices, Quantum Wells and Heterostructures

    Contributors:

    Esaki, Leo (author)

    Published in:

    Dynamical Phenomena at Surfaces, Interfaces and Superlattices ; 48-59

    Springer Series in Surface Sciences ; 3

    Publication date:

    1985-01-01

    Size:

    12 pages

    ISBN:

    978-3-642-82537-8 , 978-3-642-82535-4

    ISSN:

    0931-5195

    DOI:

    https://doi.org/10.1007/978-3-642-82535-4_4

    Type of media:

    Article/Chapter (Book)

    Type of material:

    Electronic Resource

    Language:

    English

    Keywords:

    Resonant Tunneling , Exciton Peak , Superlattice Period , Wigner Crystal , Anomalous Peak Physics , Surface and Interface Science, Thin Films , Surfaces and Interfaces, Thin Films

    Similar titles

    Electronic and Optical Properties of Semiconductor Quantum Wells and Superlattices

    Tjapkin, D. / Milanovic, V. / Ikonic, Z. et al. | British Library Online Contents | 1996

    Far-IR characterization of GaInAs/InP quantum wells and superlattices

    Amiotti, M. / Guizzetti, G. / Patrini, M. et al. | British Library Online Contents | 1994

    Photoluminescence line-shape analysis in quantum wells embedded in superlattices

    Donchev, V. / Shtinkov, N. / Germanova, K. et al. | British Library Online Contents | 2001

    Interface properties in ZnSe/ZnS based strained superlattices and quantum wells

    Maia Jr, F. F. / Freire, J. A. / Freire, V. N. et al. | British Library Online Contents | 2004

    Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices

    Han, Z. Y. / Jia, Y. B. / Grimmeiss, H. G. | British Library Online Contents | 1994

    Back to top