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Chemical trends in metal-semiconductor barrier heights
Abstract Experimental data on metal-semiconductor interfaces are reexamined. It is found that the previously reported abrupt transition between covalent and ionic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate nosaturation of the interface parameter Sfor S= 1. Considering the definition of S, it follows that the true Schottky limit should occur for some number S≈: 2.0-3.0 rather than for exactly S= 1 as previously claimed.
Chemical trends in metal-semiconductor barrier heights
Abstract Experimental data on metal-semiconductor interfaces are reexamined. It is found that the previously reported abrupt transition between covalent and ionic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate nosaturation of the interface parameter Sfor S= 1. Considering the definition of S, it follows that the true Schottky limit should occur for some number S≈: 2.0-3.0 rather than for exactly S= 1 as previously claimed.
Chemical trends in metal-semiconductor barrier heights
Schlütcr, M. (author)
1990-01-01
4 pages
Article/Chapter (Book)
Electronic Resource
English
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