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Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films
Abstract The properties of thin Y2O3, ZnO and Ba0.5Sr0.5TiO3 films grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique have been studied. With respect to films grown by conventional PLD under similar conditions, but without UV illumination, the UVPLD grown films exhibit better structural, optical, morphological and electrical properties, especially for lower substrate temperatures. They also exhibit a better stoichiometry and contain less physisorbed oxygen than the conventional PLD grown layers. It has been found that physisorbed oxygen is the main oxygen source for the growth at the interface between the Si substrate and the deposited layer, of a SiO x interfacial layer. The improvement of the UVPLD grown film properties can be traced to several factors. First, deep UV photons and ozone ensure better in situ cleaning of the substrate prior to deposition. Second, the presence of more reactive gaseous species like ozone and atomic oxygen formed by photodissociation of molecular O2 promotes the growth of more oxygenated films. Finally, absorption of UV photons by adatoms could result in an increase of their surface mobility. All these factors have a beneficial effect upon crystalline growth, especially for moderate substrate temperatures.
Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films
Abstract The properties of thin Y2O3, ZnO and Ba0.5Sr0.5TiO3 films grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique have been studied. With respect to films grown by conventional PLD under similar conditions, but without UV illumination, the UVPLD grown films exhibit better structural, optical, morphological and electrical properties, especially for lower substrate temperatures. They also exhibit a better stoichiometry and contain less physisorbed oxygen than the conventional PLD grown layers. It has been found that physisorbed oxygen is the main oxygen source for the growth at the interface between the Si substrate and the deposited layer, of a SiO x interfacial layer. The improvement of the UVPLD grown film properties can be traced to several factors. First, deep UV photons and ozone ensure better in situ cleaning of the substrate prior to deposition. Second, the presence of more reactive gaseous species like ozone and atomic oxygen formed by photodissociation of molecular O2 promotes the growth of more oxygenated films. Finally, absorption of UV photons by adatoms could result in an increase of their surface mobility. All these factors have a beneficial effect upon crystalline growth, especially for moderate substrate temperatures.
Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films
Craciun, V. (author) / Singh, R. K. (author)
2002-01-01
14 pages
Article/Chapter (Book)
Electronic Resource
English
Pulse Laser Deposition , Barium Strontium Titanate , Grown Layer , Barium Strontium Titanate Thin Film , Reactive Gaseous Species Physics , Physics, general , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Characterization and Evaluation of Materials , Physical Chemistry , Condensed Matter Physics
Ultraviolet-assisted pulsed laser deposition of thin oxide films
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