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Surface Space-Charge Region in Thermal Equilibrium
Abstract Due to the low carrier densities in non-degenerately doped semiconductors, spatially extended space-charge layers may be present at semiconductor surfaces and interfaces. The resulting band bending is obtained by solving Pois-son’s equation. In thermal equilibrium, the space charge is balanced by a net charge in electronic surface or interface states. Depending on the sign and the magnitude of the surface band-bending, accumulation, depletion, and inversion layers are to be distinguished. Larger carrier concentrations in accumulation and inversion layers lead to quantum size-effects.
Surface Space-Charge Region in Thermal Equilibrium
Abstract Due to the low carrier densities in non-degenerately doped semiconductors, spatially extended space-charge layers may be present at semiconductor surfaces and interfaces. The resulting band bending is obtained by solving Pois-son’s equation. In thermal equilibrium, the space charge is balanced by a net charge in electronic surface or interface states. Depending on the sign and the magnitude of the surface band-bending, accumulation, depletion, and inversion layers are to be distinguished. Larger carrier concentrations in accumulation and inversion layers lead to quantum size-effects.
Surface Space-Charge Region in Thermal Equilibrium
Professor Dr. Mönch, Winfried (author)
Third, Revised Edition
2001-01-01
11 pages
Article/Chapter (Book)
Electronic Resource
English
Space Charge , Minority Carrier , Depletion Layer , Inversion Layer , Large Carrier Concentration Chemistry , Physical Chemistry , Optics and Electrodynamics , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Optical and Electronic Materials , Characterization and Evaluation of Materials
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