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Ultrafast All‐Optical Switching and Active Sub‐Cycle Waveform Control via Time‐Variant Photodoping of Terahertz Metasurfaces
AbstractThe development of high‐speed and high‐performance optical switches has been a long‐standing issue in the field of photonics. This paper introduces a pioneering time‐resolved spectroscopy‐based approach for realizing photon‐induced ultrafast terahertz (THz) modulation within an electrical split‐ring resonator (SRR) via photoexcitation, rather than relaxation dynamics, in a silicon‐based indirect‐bandgap material. Two competitive effects (shorting of LC circuit and metallization of substrate) occur during photon‐induced THz modulation. The tradeoff between these two effects enables high‐speed optical switching via different time scales of the photoexcitation processes—THz‐optical cooperative effect and phonon‐assisted electron transition. THz‐optical cooperative photoexcitation, causing a shorting effect within the LC circuit, has been observed in the SRR gap, whose size typically exceeds that facilitating impact ionization (IMI). Notably, a remarkably short THz switching time of 1.3 ps has been achieved via only photoexcitation and with a high‐performance transmission intensity modulation depth of over 500%. In addition, active temporal waveform control down to a sub‐cycle pulse has been successfully demonstrated. The proposed approach suggests a new route for constructing high‐speed and efficient THz dynamic photonic devices with potential applications in temporal waveform control.
Ultrafast All‐Optical Switching and Active Sub‐Cycle Waveform Control via Time‐Variant Photodoping of Terahertz Metasurfaces
AbstractThe development of high‐speed and high‐performance optical switches has been a long‐standing issue in the field of photonics. This paper introduces a pioneering time‐resolved spectroscopy‐based approach for realizing photon‐induced ultrafast terahertz (THz) modulation within an electrical split‐ring resonator (SRR) via photoexcitation, rather than relaxation dynamics, in a silicon‐based indirect‐bandgap material. Two competitive effects (shorting of LC circuit and metallization of substrate) occur during photon‐induced THz modulation. The tradeoff between these two effects enables high‐speed optical switching via different time scales of the photoexcitation processes—THz‐optical cooperative effect and phonon‐assisted electron transition. THz‐optical cooperative photoexcitation, causing a shorting effect within the LC circuit, has been observed in the SRR gap, whose size typically exceeds that facilitating impact ionization (IMI). Notably, a remarkably short THz switching time of 1.3 ps has been achieved via only photoexcitation and with a high‐performance transmission intensity modulation depth of over 500%. In addition, active temporal waveform control down to a sub‐cycle pulse has been successfully demonstrated. The proposed approach suggests a new route for constructing high‐speed and efficient THz dynamic photonic devices with potential applications in temporal waveform control.
Ultrafast All‐Optical Switching and Active Sub‐Cycle Waveform Control via Time‐Variant Photodoping of Terahertz Metasurfaces
Advanced Science
Jang, Jeongmin (author) / Rho, Junsuk (author) / Shin, Hee Jun (author)
2025-02-20
Article (Journal)
Electronic Resource
English
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