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Advances and Frontiers in Single‐Walled Carbon Nanotube Electronics
https://orcid.org/0000-0001-5848-8561
https://orcid.org/0000-0002-2655-4971
AbstractSingle‐walled carbon nanotubes (SWCNTs) have been considered as one of the most promising electronic materials for the next‐generation electronics in the more Moore era. Sub‐10 nm SWCNT‐field effect transistors (FETs) have been realized with several performances exceeding those of Si‐based FETs at the same feature size. Several industrial initiatives have attempted to implement SWCNT electronics in integrated circuit (IC) chips. Here, the recent advances in SWCNT electronics are reviewed from in‐depth understanding of the fundamental electronic structures, the carrier transport mechanisms, and the metal/SWCNT contact properties. In particular, the subthreshold switching properties are highlighted for low‐power, energy‐efficient device operations. State‐of‐the‐art low‐power SWCNT‐based electronics and the key strategies to realize low‐voltage and low‐power operations are outlined. Finally, the essential challenges and prospects from the material preparation, device fabrication, and large‐scale ICs integration for future SWCNT‐based electronics are foregrounded.
Advances and Frontiers in Single‐Walled Carbon Nanotube Electronics
https://orcid.org/0000-0001-5848-8561
https://orcid.org/0000-0002-2655-4971
AbstractSingle‐walled carbon nanotubes (SWCNTs) have been considered as one of the most promising electronic materials for the next‐generation electronics in the more Moore era. Sub‐10 nm SWCNT‐field effect transistors (FETs) have been realized with several performances exceeding those of Si‐based FETs at the same feature size. Several industrial initiatives have attempted to implement SWCNT electronics in integrated circuit (IC) chips. Here, the recent advances in SWCNT electronics are reviewed from in‐depth understanding of the fundamental electronic structures, the carrier transport mechanisms, and the metal/SWCNT contact properties. In particular, the subthreshold switching properties are highlighted for low‐power, energy‐efficient device operations. State‐of‐the‐art low‐power SWCNT‐based electronics and the key strategies to realize low‐voltage and low‐power operations are outlined. Finally, the essential challenges and prospects from the material preparation, device fabrication, and large‐scale ICs integration for future SWCNT‐based electronics are foregrounded.
Advances and Frontiers in Single‐Walled Carbon Nanotube Electronics
https://orcid.org/0000-0001-5848-8561
https://orcid.org/0000-0002-2655-4971
AbstractSingle‐walled carbon nanotubes (SWCNTs) have been considered as one of the most promising electronic materials for the next‐generation electronics in the more Moore era. Sub‐10 nm SWCNT‐field effect transistors (FETs) have been realized with several performances exceeding those of Si‐based FETs at the same feature size. Several industrial initiatives have attempted to implement SWCNT electronics in integrated circuit (IC) chips. Here, the recent advances in SWCNT electronics are reviewed from in‐depth understanding of the fundamental electronic structures, the carrier transport mechanisms, and the metal/SWCNT contact properties. In particular, the subthreshold switching properties are highlighted for low‐power, energy‐efficient device operations. State‐of‐the‐art low‐power SWCNT‐based electronics and the key strategies to realize low‐voltage and low‐power operations are outlined. Finally, the essential challenges and prospects from the material preparation, device fabrication, and large‐scale ICs integration for future SWCNT‐based electronics are foregrounded.
Advances and Frontiers in Single‐Walled Carbon Nanotube Electronics
Advanced Science
Zou, Jianping (author) / Zhang, Qing (author)
Advanced Science ; 8
2021-12-01
Article (Journal)
Electronic Resource
English
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