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Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure
https://orcid.org/0000-0001-9478-7331
https://orcid.org/0000-0001-6340-9151
https://orcid.org/0000-0002-8938-4869
https://orcid.org/0000-0001-5020-4632
https://orcid.org/0000-0002-5473-6086
AbstractTo develop voltage‐controlled magnetization switching technologies for spintronics applications, a highly (422)‐oriented Co2FeSi layer on top of the piezoelectric PMN‐PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra‐thin layer. The strength of the growth‐induced magnetic anisotropy of the (422)‐oriented Co2FeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown Co2FeSi layers. As a result, a giant converse magnetoelectric effect (over 10−5 s m−1) and a non‐volatile binary state at zero electric field are simultaneously achieved in the (422)‐oriented Co2FeSi/V/PMN‐PT(011) multiferroic heterostructure. This study leads to a way toward magnetoresistive random‐access‐memory (MRAM) with a low power writing technology.
Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure
https://orcid.org/0000-0001-9478-7331
https://orcid.org/0000-0001-6340-9151
https://orcid.org/0000-0002-8938-4869
https://orcid.org/0000-0001-5020-4632
https://orcid.org/0000-0002-5473-6086
AbstractTo develop voltage‐controlled magnetization switching technologies for spintronics applications, a highly (422)‐oriented Co2FeSi layer on top of the piezoelectric PMN‐PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra‐thin layer. The strength of the growth‐induced magnetic anisotropy of the (422)‐oriented Co2FeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown Co2FeSi layers. As a result, a giant converse magnetoelectric effect (over 10−5 s m−1) and a non‐volatile binary state at zero electric field are simultaneously achieved in the (422)‐oriented Co2FeSi/V/PMN‐PT(011) multiferroic heterostructure. This study leads to a way toward magnetoresistive random‐access‐memory (MRAM) with a low power writing technology.
Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure
https://orcid.org/0000-0001-9478-7331
https://orcid.org/0000-0001-6340-9151
https://orcid.org/0000-0002-8938-4869
https://orcid.org/0000-0001-5020-4632
https://orcid.org/0000-0002-5473-6086
AbstractTo develop voltage‐controlled magnetization switching technologies for spintronics applications, a highly (422)‐oriented Co2FeSi layer on top of the piezoelectric PMN‐PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra‐thin layer. The strength of the growth‐induced magnetic anisotropy of the (422)‐oriented Co2FeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown Co2FeSi layers. As a result, a giant converse magnetoelectric effect (over 10−5 s m−1) and a non‐volatile binary state at zero electric field are simultaneously achieved in the (422)‐oriented Co2FeSi/V/PMN‐PT(011) multiferroic heterostructure. This study leads to a way toward magnetoresistive random‐access‐memory (MRAM) with a low power writing technology.
Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure
Advanced Science
Usami, Takamasa (author) / Sanada, Yuya (author) / Fujii, Shumpei (author) / Yamada, Shinya (author) / Shiratsuchi, Yu (author) / Nakatani, Ryoichi (author) / Hamaya, Kohei (author)
Advanced Science ; 12
2025-02-01
Article (Journal)
Electronic Resource
English
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