A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Nanographene‐Based Heterojunctions for High‐Performance Organic Phototransistor Memory Devices
Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next‐generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆Vth) for phototransistors. Here, a nanographene‐based heterojunction phototransistor memory with large ∆Vth responses is reported. Exposure to low intensity light (25.7 µW cm−2) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 105) and memory properties including long retention time (>1.5 × 105 s), large hysteresis (45.35 V), and high endurance for voltage‐erasing and light‐programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene‐organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high‐performance organic phototransistor devices.
Nanographene‐Based Heterojunctions for High‐Performance Organic Phototransistor Memory Devices
Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next‐generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆Vth) for phototransistors. Here, a nanographene‐based heterojunction phototransistor memory with large ∆Vth responses is reported. Exposure to low intensity light (25.7 µW cm−2) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 105) and memory properties including long retention time (>1.5 × 105 s), large hysteresis (45.35 V), and high endurance for voltage‐erasing and light‐programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene‐organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high‐performance organic phototransistor devices.
Nanographene‐Based Heterojunctions for High‐Performance Organic Phototransistor Memory Devices
Bai, Shaoling (author) / Yang, Lin (author) / Haase, Katherina (author) / Wolansky, Jakob (author) / Zhang, Zongbao (author) / Tseng, Hsin (author) / Talnack, Felix (author) / Kress, Joshua (author) / Andrade, Jonathan Perez (author) / Benduhn, Johannes (author)
Advanced Science ; 10
2023-05-01
12 pages
Article (Journal)
Electronic Resource
English
Morphology and thermal characterization of nanographene platelets
| British Library Online Contents | 2011
Macroscopic 3D Nanographene with Dynamically Tunable Bulk Properties
| British Library Online Contents | 2012
Performance of heat transfer fluids with nanographene in a pilot solar collector
| British Library Online Contents | 2018