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    Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

    New search for: Chen, Shanliang
    New search for: Shang, Minghui
    New search for: Gao, Fengmei
    New search for: Wang, Lin
    New search for: Ying, Pengzhan
    New search for: Yang, Weiyou
    New search for: Fang, Xiaosheng

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    Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

    New search for: Chen, Shanliang
    New search for: Shang, Minghui
    New search for: Gao, Fengmei
    New search for: Wang, Lin
    New search for: Ying, Pengzhan
    New search for: Yang, Weiyou
    New search for: Fang, Xiaosheng

    Access

    Download

    Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

    New search for: Chen, Shanliang
    New search for: Shang, Minghui
    New search for: Gao, Fengmei
    New search for: Wang, Lin
    New search for: Ying, Pengzhan
    New search for: Yang, Weiyou
    New search for: Fang, Xiaosheng

    Access

    Download

    Access

    Download

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

    Contributors:

    Chen, Shanliang (author) / Shang, Minghui (author) / Gao, Fengmei (author) / Wang, Lin (author) / Ying, Pengzhan (author) / Yang, Weiyou (author) / Fang, Xiaosheng (author)

    Published in:

    Advanced Science ; 3

    Publication date:

    2016-01-01

    Size:

    1 pages

    ISSN:

    2198-3844

    DOI:

    https://doi.org/10.1002/advs.201670002

    Type of media:

    Article (Journal)

    Type of material:

    Electronic Resource

    Language:

    English

    Keywords:

    low turn‐on fields , P‐doped SiC , stable current emission , flexible devices , field emitters

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